Junctions in Axial III-V Heterostructure Nanowires Obtained via an Interchange of Group III Elements

Peter Krogstrup; Jun Yamasaki; Claus B. Sørensen; Erik Johnson; Jakob Birkedal Wagner; Robert S. Pennington; Martin Aagesen; Nubuo Tanaka; Jesper Nygård

doi:10.1021/nl901348d

Junctions in Axial III-V Heterostructure Nanowires Obtained via an Interchange of Group III Elements

Peter Krogstrup
, Jun Yamasaki
, Claus B. Sørensen
, Erik Johnson
, Jakob Birkedal Wagner
, Robert S. Pennington
, Martin Aagesen
, Nubuo Tanaka
, Jesper Nygård

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We present an investigation of the morphology and composition of novel types of axial nanowire heterostructures where GaxIn1-xAs is used as barrier material in InAs nanowires. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray analysis we demonstrate that it is possible to grow junctions by changing the group III elements, and we find that a substantial fraction of Ga can be incorporated in axial InAs/GaxIn1-xAs/InAs, retaining straight nanowire configurations. We explain how the adatoms are transferred to the incorporation site at the growth interface via two different routes, (1) interface diffusion and (2) volume diffusion through the catalyst particle.

Original language	English
Journal	Nano Letters
Volume	9
Issue number	11
Pages (from-to)	3689
ISSN	1530-6984
DOIs	https://doi.org/10.1021/nl901348d
Publication status	Published - 2009

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title = "Junctions in Axial III-V Heterostructure Nanowires Obtained via an Interchange of Group III Elements",

abstract = "We present an investigation of the morphology and composition of novel types of axial nanowire heterostructures where GaxIn1-xAs is used as barrier material in InAs nanowires. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray analysis we demonstrate that it is possible to grow junctions by changing the group III elements, and we find that a substantial fraction of Ga can be incorporated in axial InAs/GaxIn1-xAs/InAs, retaining straight nanowire configurations. We explain how the adatoms are transferred to the incorporation site at the growth interface via two different routes, (1) interface diffusion and (2) volume diffusion through the catalyst particle.",

author = "Peter Krogstrup and Jun Yamasaki and S{\o}rensen, \{Claus B.\} and Erik Johnson and Wagner, \{Jakob Birkedal\} and Pennington, \{Robert S.\} and Martin Aagesen and Nubuo Tanaka and Jesper Nyg{\aa}rd",

year = "2009",

doi = "10.1021/nl901348d",

language = "English",

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journal = "Nano Letters",

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T1 - Junctions in Axial III-V Heterostructure Nanowires Obtained via an Interchange of Group III Elements

AU - Krogstrup, Peter

AU - Yamasaki, Jun

AU - Sørensen, Claus B.

AU - Johnson, Erik

AU - Wagner, Jakob Birkedal

AU - Pennington, Robert S.

AU - Aagesen, Martin

AU - Tanaka, Nubuo

AU - Nygård, Jesper

PY - 2009

Y1 - 2009

N2 - We present an investigation of the morphology and composition of novel types of axial nanowire heterostructures where GaxIn1-xAs is used as barrier material in InAs nanowires. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray analysis we demonstrate that it is possible to grow junctions by changing the group III elements, and we find that a substantial fraction of Ga can be incorporated in axial InAs/GaxIn1-xAs/InAs, retaining straight nanowire configurations. We explain how the adatoms are transferred to the incorporation site at the growth interface via two different routes, (1) interface diffusion and (2) volume diffusion through the catalyst particle.

AB - We present an investigation of the morphology and composition of novel types of axial nanowire heterostructures where GaxIn1-xAs is used as barrier material in InAs nanowires. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray analysis we demonstrate that it is possible to grow junctions by changing the group III elements, and we find that a substantial fraction of Ga can be incorporated in axial InAs/GaxIn1-xAs/InAs, retaining straight nanowire configurations. We explain how the adatoms are transferred to the incorporation site at the growth interface via two different routes, (1) interface diffusion and (2) volume diffusion through the catalyst particle.

U2 - 10.1021/nl901348d

DO - 10.1021/nl901348d

M3 - Journal article

C2 - 19842690

SN - 1530-6984

VL - 9

SP - 3689

JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Junctions in Axial III-V Heterostructure Nanowires Obtained via an Interchange of Group III Elements

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