Noise and regeneration in semiconductor waveguides with saturable gain and absorption

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We have modeled the noise properties of a novel waveguide device with regenerative properties. The device consists of alternating sections of saturable gain and absorption, which give a nonlinear power transfer function. We investigate the relative intensity noise spectra and signal-to-noise ratio after the device by both a small-signal analysis and large-signal simulation, and we show that the gain saturation gives noise redistribution at the mark level. We also examine the influence of the nonlinearity on the noise probability density function and show that the standard approximations of Gaussian and noncentral>tex/tex
Original languageEnglish
JournalI E E E Journal of Quantum Electronics
Volume40
Issue number3
Pages (from-to)245-255
ISSN0018-9197
DOIs
Publication statusPublished - 2004

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