Butt-joint integration of active optical components based on InP/AlInGaAsP alloys

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedings – Annual report year: 2014Researchpeer-review

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We demonstrate all-active planar high quality butt-joint (BJ) integration of a QW Semiconductor Optical Amplifier (SOA) and MQW Electro-Absorption Modulator (EAM) based on an InP/AlInGaAsP platform. The degradation of the optical properties in the vicinity of ~1 μm to the BJ interface was determined by means of μPL measurements.
Original languageEnglish
Title of host publicationProceedings of the 26th International Conference on Indium Phosphide and Related Materials
Publication date2014
ISBN (Print)9781479957293
Publication statusPublished - 2014
Event26th International Conference on Indium Phosphide and Related Materials - Montpellier, France
Duration: 11 May 201415 May 2014


Conference26th International Conference on Indium Phosphide and Related Materials
CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • electro-optical modulation, electroabsorption, III-V semiconductors, indium compounds, integrated optics, photoluminescence, quantum well lasers, semiconductor optical amplifiers, Components, Circuits, Devices and Systems, Photonics and Electrooptics, active optical components, Al(role int), Al(role ss), AlInGaAsP(role int), AlInGaAsP(role ss), all-active planar high quality butt-joint integration, As(role int), As(role ss), BJ interface, EAM, Ga(role int), Ga(role ss), In(role bin), In(role int), In(role ss), Indium gallium arsenide, Indium phosphide, InP(role bin), InP(role int), InP-AlInGaAsP, InP-AlInGaAsP(role int), InP/AlInGaAsP alloys, Laser mode locking, MQW Electro-Absorption Modulator, optical properties, Optical reflection, P(role bin), P(role int), P(role ss), Quantum well devices, QW Semiconductor Optical Amplifier, Semiconductor optical amplifiers, SOA, μPL measurements
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ID: 101894604