Zero- and one-dimensional nanostructures on an Si1-xGex/Si(100) surface

Zero- and one-dimensional nanostructures on the surface of Si_1-xGe_x compositionally graded, epitaxial layers on Si(100) single crystals produced by a self-organized relaxation process are reported. Post-growth atomically flat surfaces can be converted into ordered, long-range coherent networks of nanostructures by a simple heat treatment procedure. The choice of heat treatment leads to a range of structures from millimeter long, single plateaus to complex patterns with nanometer structures and spacings. The vertical dimensions can be controlled in the nanometer range by varying the thickness of the Si_1-xGex layer.