We have shown that the onset and transition pressures of the GaAs I --> II transition are 17 GPa and 20 GPa, respectively, for both bulk and nanophase material. The observed gradual change in resistivity of nanophase GaAs,at the semiconductor-to-metal transition is explained by the two-component model developed by Gleiter.
|Journal||High Pressure Research|
|Number of pages||4|
|Publication status||Published - 2002|