X-ray diffraction study on pressure-induced phase transformation in nanocrystalline GaAs

Jianzhong Jiang, J. S. Olsen, Leif Gerward, S. Steenstrup

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We have shown that the onset and transition pressures of the GaAs I --> II transition are 17 GPa and 20 GPa, respectively, for both bulk and nanophase material. The observed gradual change in resistivity of nanophase GaAs,at the semiconductor-to-metal transition is explained by the two-component model developed by Gleiter.
Original languageEnglish
JournalHigh Pressure Research
Volume22
Issue number2
Pages (from-to)395-398
Number of pages4
ISSN0895-7959
Publication statusPublished - 2002

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