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W/SiC X-ray multilayers optimized for use above 100 keV

  • D.L. Windt
  • , S. Dongey
  • , C.J. Hailey
  • , J. Koglin
  • , V. Honkimaki
  • , E. Ziegler
  • , Finn Erland Christensen
  • , H.C. Chen
  • , F.A. Harrison
  • , W.W. Craig
    • California Institute of Technology
    • Columbia University
    • Lawrence Livermore National Laboratory
    • European Synchrotron Radiation Facility

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    We have developed a new depth-graded multilayer system comprising W and SiC layers, suitable for use as hard X-ray reflective coatings operating in the energy range 100 - 200 keV. Grazing incidence X-ray reflectance at E=8 keV was used to characterize the interface widths, as well as the temporal and thermal stability in both periodic and depth-graded W/SiC structures, while synchrotron radiation was used to measure the hard X-ray reflectance of a depth-graded multilayer designed specifically for use in the range Esimilar to150 - 170 keV. We have modeled the hard X-ray reflectance using newly-derived optical constants, which we determined from reflectance-vs-incidence angle measurements also made using synchrotron radiation, in the range E=120 - 180 keV. We describe our experimental investigation in detail, compare the new W/SiC multilayers with both W/Si and W/B4C films that have been studied previously, and discuss the significance of these results with regard to the eventual development of a hard X-ray nuclear line telescope.
    Original languageEnglish
    Title of host publicationSPIE proceedings : X-Ray and Gamma-Ray Telescopes and Instruments for Astronomy
    Publication date2002
    Pages639-646
    ISBN (Print) 0-8194-4630-0
    DOIs
    Publication statusPublished - 2002
    EventSPIE Astronomical Telescopes and Instrumentation 2002 - Waikoloa, United States
    Duration: 22 Aug 200228 Aug 2002

    Conference

    ConferenceSPIE Astronomical Telescopes and Instrumentation 2002
    Country/TerritoryUnited States
    CityWaikoloa
    Period22/08/200228/08/2002
    SeriesProceedings of SPIE - The International Society for Optical Engineering
    ISSN0277-786X

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