Width-Dependent Sheet Resistance of Nanometer-Wide Si Fins as Measured with Micro Four-Point Probe

Janusz Bogdanowicz, Steven Folkersma, Stefanie Sergeant, Andreas Schulze, Alain Moussa, Dirch Hjorth Petersen, Ole Hansen, Henrik Hartmann Henrichsen, Peter Folmer Nielsen, Wilfried Vandervorst

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    This paper extends the applicability of the micro four-point probe technique from the sheet resistance measurements on large areas toward narrow (<20 nm) semiconducting nanostructures with an elongated fin geometry. Using this technology, it is shown that the sheet resistance of boron-implanted and laser-annealed silicon fins with widths ranging from 500 down to 20 nm rises as the width is reduced. Drift-diffusion simulations show that the observed increase can be partially explained by the carrier depletion induced by interface states at the fin sidewalls.
    Original languageEnglish
    Article number1700857
    JournalPhysica Status Solidi. A: Applications and Materials Science (Online)
    Volume215
    Issue number6
    Number of pages4
    ISSN1862-6319
    DOIs
    Publication statusPublished - 2018

    Cite this

    Bogdanowicz, Janusz ; Folkersma, Steven ; Sergeant, Stefanie ; Schulze, Andreas ; Moussa, Alain ; Petersen, Dirch Hjorth ; Hansen, Ole ; Henrichsen, Henrik Hartmann ; Nielsen, Peter Folmer ; Vandervorst, Wilfried. / Width-Dependent Sheet Resistance of Nanometer-Wide Si Fins as Measured with Micro Four-Point Probe. In: Physica Status Solidi. A: Applications and Materials Science (Online). 2018 ; Vol. 215, No. 6.
    @article{0277239746b1402083e6118966a72caf,
    title = "Width-Dependent Sheet Resistance of Nanometer-Wide Si Fins as Measured with Micro Four-Point Probe",
    abstract = "This paper extends the applicability of the micro four-point probe technique from the sheet resistance measurements on large areas toward narrow (<20 nm) semiconducting nanostructures with an elongated fin geometry. Using this technology, it is shown that the sheet resistance of boron-implanted and laser-annealed silicon fins with widths ranging from 500 down to 20 nm rises as the width is reduced. Drift-diffusion simulations show that the observed increase can be partially explained by the carrier depletion induced by interface states at the fin sidewalls.",
    author = "Janusz Bogdanowicz and Steven Folkersma and Stefanie Sergeant and Andreas Schulze and Alain Moussa and Petersen, {Dirch Hjorth} and Ole Hansen and Henrichsen, {Henrik Hartmann} and Nielsen, {Peter Folmer} and Wilfried Vandervorst",
    year = "2018",
    doi = "10.1002/pssa.201700857",
    language = "English",
    volume = "215",
    journal = "Physica Status Solidi. A: Applications and Materials Science (Online)",
    issn = "1862-6319",
    publisher = "Wiley - V C H Verlag GmbH & Co. KGaA",
    number = "6",

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    Width-Dependent Sheet Resistance of Nanometer-Wide Si Fins as Measured with Micro Four-Point Probe. / Bogdanowicz, Janusz; Folkersma, Steven; Sergeant, Stefanie; Schulze, Andreas; Moussa, Alain; Petersen, Dirch Hjorth; Hansen, Ole; Henrichsen, Henrik Hartmann; Nielsen, Peter Folmer; Vandervorst, Wilfried.

    In: Physica Status Solidi. A: Applications and Materials Science (Online), Vol. 215, No. 6, 1700857, 2018.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Width-Dependent Sheet Resistance of Nanometer-Wide Si Fins as Measured with Micro Four-Point Probe

    AU - Bogdanowicz, Janusz

    AU - Folkersma, Steven

    AU - Sergeant, Stefanie

    AU - Schulze, Andreas

    AU - Moussa, Alain

    AU - Petersen, Dirch Hjorth

    AU - Hansen, Ole

    AU - Henrichsen, Henrik Hartmann

    AU - Nielsen, Peter Folmer

    AU - Vandervorst, Wilfried

    PY - 2018

    Y1 - 2018

    N2 - This paper extends the applicability of the micro four-point probe technique from the sheet resistance measurements on large areas toward narrow (<20 nm) semiconducting nanostructures with an elongated fin geometry. Using this technology, it is shown that the sheet resistance of boron-implanted and laser-annealed silicon fins with widths ranging from 500 down to 20 nm rises as the width is reduced. Drift-diffusion simulations show that the observed increase can be partially explained by the carrier depletion induced by interface states at the fin sidewalls.

    AB - This paper extends the applicability of the micro four-point probe technique from the sheet resistance measurements on large areas toward narrow (<20 nm) semiconducting nanostructures with an elongated fin geometry. Using this technology, it is shown that the sheet resistance of boron-implanted and laser-annealed silicon fins with widths ranging from 500 down to 20 nm rises as the width is reduced. Drift-diffusion simulations show that the observed increase can be partially explained by the carrier depletion induced by interface states at the fin sidewalls.

    U2 - 10.1002/pssa.201700857

    DO - 10.1002/pssa.201700857

    M3 - Journal article

    VL - 215

    JO - Physica Status Solidi. A: Applications and Materials Science (Online)

    JF - Physica Status Solidi. A: Applications and Materials Science (Online)

    SN - 1862-6319

    IS - 6

    M1 - 1700857

    ER -