Width-Dependent Sheet Resistance of Nanometer-Wide Si Fins as Measured with Micro Four-Point Probe

Janusz Bogdanowicz, Steven Folkersma, Stefanie Sergeant, Andreas Schulze, Alain Moussa, Dirch Hjorth Petersen, Ole Hansen, Henrik Hartmann Henrichsen, Peter Folmer Nielsen, Wilfried Vandervorst

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    Abstract

    This paper extends the applicability of the micro four-point probe technique from the sheet resistance measurements on large areas toward narrow (<20 nm) semiconducting nanostructures with an elongated fin geometry. Using this technology, it is shown that the sheet resistance of boron-implanted and laser-annealed silicon fins with widths ranging from 500 down to 20 nm rises as the width is reduced. Drift-diffusion simulations show that the observed increase can be partially explained by the carrier depletion induced by interface states at the fin sidewalls.
    Original languageEnglish
    Article number1700857
    JournalPhysica Status Solidi. A: Applications and Materials Science (Online)
    Volume215
    Issue number6
    Number of pages4
    ISSN1862-6319
    DOIs
    Publication statusPublished - 2018

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