Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

Viktor Krozer; Tom Keinicke Johansen; Torsten Djurhuus; Jens Vidkjær

Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

Viktor Krozer
, Tom Keinicke Johansen
, Torsten Djurhuus
, Jens Vidkjær

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is ∼ 20 GHz with excellent amplitude and phase linearity. The predicted conversion gain is around 10 dB. Simulated results are supported by experimental characterization. Good agreement is found between simulations and experiment is found after adjustment of technology parameters.

Original language	English
Title of host publication	GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
Publisher	IEEE
Publication date	2005
Pages	637-640
ISBN (Print)	88-902012-0-7
Publication status	Published - 2005
Event	European Gallium Arsenide and Other Semiconductor Application Symposium - Paris, France Duration: 3 Oct 2005 → 4 Oct 2005 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=10684

Conference

Conference	European Gallium Arsenide and Other Semiconductor Application Symposium
Country/Territory	France
City	Paris
Period	03/10/2005 → 04/10/2005
Internet address	http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=10684

Bibliographical note

Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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@inproceedings{5d68f310072d4f83a9b95dc32ce3114d,

title = "Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology",

abstract = "We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is ∼ 20 GHz with excellent amplitude and phase linearity. The predicted conversion gain is around 10 dB. Simulated results are supported by experimental characterization. Good agreement is found between simulations and experiment is found after adjustment of technology parameters.",

author = "Viktor Krozer and Johansen, \{Tom Keinicke\} and Torsten Djurhuus and Jens Vidkj{\ae}r",

note = "Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; European Gallium Arsenide and Other Semiconductor Application Symposium, EGAAS 2005 ; Conference date: 03-10-2005 Through 04-10-2005",

year = "2005",

language = "English",

isbn = "88-902012-0-7",

pages = "637--640",

booktitle = "GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium",

publisher = "IEEE",

address = "United States",

url = "http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=10684",

}

Krozer, V, Johansen, TK, Djurhuus, T & Vidkjær, J 2005, Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology. in GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. IEEE, pp. 637-640, European Gallium Arsenide and Other Semiconductor Application Symposium, Paris, France, 03/10/2005.

Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology. / Krozer, Viktor; Johansen, Tom Keinicke; Djurhuus, Torsten et al.
GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium. IEEE, 2005. p. 637-640.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

AU - Krozer, Viktor

AU - Johansen, Tom Keinicke

AU - Djurhuus, Torsten

AU - Vidkjær, Jens

N1 - Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 2005

Y1 - 2005

N2 - We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is ∼ 20 GHz with excellent amplitude and phase linearity. The predicted conversion gain is around 10 dB. Simulated results are supported by experimental characterization. Good agreement is found between simulations and experiment is found after adjustment of technology parameters.

AB - We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is ∼ 20 GHz with excellent amplitude and phase linearity. The predicted conversion gain is around 10 dB. Simulated results are supported by experimental characterization. Good agreement is found between simulations and experiment is found after adjustment of technology parameters.

M3 - Article in proceedings

SN - 88-902012-0-7

SP - 637

EP - 640

BT - GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

PB - IEEE

T2 - European Gallium Arsenide and Other Semiconductor Application Symposium

Y2 - 3 October 2005 through 4 October 2005

ER -

Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology

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