We present monolithic microwave integrated circuit (MMIC) frequency converter, which can be used for up and down conversion, due to the large RF and IF port bandwidth. The MMIC converters are based on commercially available GaAs mHEMT technology and are comprised of a Gilbert mixer cell core, baluns and combiners. Single ended and balanced configurations DC and AC coupled have been investigated. The instantaneous 3 dB bandwidth at both the RF and the IF port of the frequency converters is ∼ 20 GHz with excellent amplitude and phase linearity. The predicted conversion gain is around 10 dB. Simulated results are supported by experimental characterization. Good agreement is found between simulations and experiment is found after adjustment of technology parameters.
|Title of host publication||GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium|
|Publication status||Published - 2005|
|Event||European Gallium Arsenide and Other Semiconductor Application Symposium - Paris, France|
Duration: 3 Oct 2005 → 4 Oct 2005
|Conference||European Gallium Arsenide and Other Semiconductor Application Symposium|
|Period||03/10/2005 → 04/10/2005|
Bibliographical noteCopyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE
Krozer, V., Johansen, T. K., Djurhuus, T., & Vidkjær, J. (2005). Wideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAs mHEMT Technology. In GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium (pp. 637-640). IEEE.