Abstract
Recent progress has led to conductance confinement at the interface of complex oxide heterostructures, thereby providing new opportunities to explore nano-electronic as well as nano-ionic devices. In this paper we describe how interfacial contiguity between materials can trigger redox reactions inducing metallic conductivity along the interface of SrTiO3-based heterostructures and create new types of 2 Dimension Electron Gases (2DEG) at the hetero-interface with electron mobility enhancements of more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Furthermore, our recent results, examining strain effects at interfaces, demonstrate the potential of achieving hetero-epitaxial thin films with superior ionic or electronic properties. We also present a novel concept that uncovers a wide variety of possible technological opportunities for materials design utilizing ionic conducting multi-layered heterostructures. These findings hold the potential to pave the way for novel and/or superior all-oxide electronic and ionic devices.
| Original language | English |
|---|---|
| Journal | Journal of Electroceramics |
| Volume | 38 |
| Issue number | 1 |
| Pages (from-to) | 1-23 |
| ISSN | 1385-3449 |
| DOIs | |
| Publication status | Published - 2017 |
Keywords
- Metal oxides
- Interface
- 2D electron gas
- Ionics
- Thin films
- Heterostructures
- Mesoscopic physics
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