Abstract
Weak-localization magnetoresistance has been measured as a function of carrier density using a back-gate technique. The phase relaxation rate and the spin-orbit relaxation rate have been determined. The dominating contribution to the phase relaxation rate comes from electron-electron interaction, as demonstrated for samples covering densities from 2.5 to 7.5 X 10(15) m-2. Interband scattering is found to enhance phase relaxation. A strictly two-dimensional electron gas (2DEG) quenches the spin-orbit relaxation rate in the plane of the 2DEG, 1/tau(so)x,y, whereas the orthogonal part, 1/tau(so)z, appears added to the phase relaxation rate in the interpretation of the weak-localization magnetoresistance, and can be determined as the saturation value of the phase relaxation at low temperatures. For high carrier densities, intersubband scattering makes the spin-orbit scattering more isotropic and our data support a theory by Elliott.
Original language | English |
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Journal | Physical Review B |
Volume | 47 |
Issue number | 23 |
Pages (from-to) | 16040-16043 |
ISSN | 2469-9950 |
Publication status | Published - 1993 |
Externally published | Yes |