Weak localisation and electron-electron interactions in modulation-doped GaAs/AlGaAs heterostructures

Physics

• Position (Location) 66%
• Wafer 50%
• Electron Mobility 33%
• Electron Scattering 33%
• Correction 33%
• Mobility 33%
• Modulation 16%
• Magnetic Fields 16%
• Temperature Dependence 16%
• Electron Density 16%
• Phase Coherence 16%
• Helium Ion 16%
• Scattering 16%
• Elastic Scattering 16%
• Ion Implantation 16%
• Implantation 16%
• Behavior 16%
• Region 16%
• Temperature 16%
• Shapes 16%
• Populations 16%
• Regimes 16%
• Spin 16%

Material Science

• Magnetoresistance 100%
• Heterojunction 66%
• Gallium Arsenide 50%
• Aluminium Gallium Arsenide 50%
• Electron Mobility 33%
• Carrier Concentration 16%
• Conductivity 16%
• Molecular Beam Epitaxy 16%
• Electronics 16%
• Electrical Conductivity 16%