Wavelength tunable MEMS VCSELs for OCT imaging

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Abstract

MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III-V wafers, which are small, expensive and challenging to work with. Furthermore, the actuating part, i.e., the MEMS, is on the top of the structure which causes a strong dependence on packaging to decrease its sensitivity to the operating environment. This work addresses these design drawbacks and proposes a novel design framework. The proposed device uses a high contrast grating mirror on a Si MEMS stage as the bottom mirror, all of which is defined in an SOI wafer. The SOI wafer is then bonded to an InP III-V wafer with the desired active layers, thereby sealing the MEMS. Finally, the top mirror, a dielectric DBR (7 pairs of TiO2 - SiO2), is deposited on top. The new device is based on a silicon substrate with MEMS defined on a silicon membrane in an enclosed cavity. Thus the device is much more robust than the existing MEMS VCSELs. This design also enables either a two-way actuation on the MEMS or a smaller optical cavity (pull-away design), i.e., wider FSR (Free Spectral Range) to increase the wavelength sweep. Fabrication of the proposed device is outlined and the results of device characterization are reported.
Original languageEnglish
Title of host publicationProceedings of SPIE
Number of pages6
Volume10552
PublisherSPIE - International Society for Optical Engineering
Publication date2018
Article number105520I
ISBN (Print)9781510615892
DOIs
Publication statusPublished - 2018
EventVertical-Cavity Surface-Emitting Lasers XXII - The Moscone Center, San Francisco, United States
Duration: 27 Jan 20181 Feb 2018

Conference

ConferenceVertical-Cavity Surface-Emitting Lasers XXII
LocationThe Moscone Center
CountryUnited States
CitySan Francisco
Period27/01/201801/02/2018
SeriesProceedings of S P I E - International Society for Optical Engineering
Volume10552
ISSN0277-786X

Keywords

  • MEMS
  • VCSEL
  • OCT
  • Wavelength tunable
  • Low threshold

Cite this

Sahoo, H. K., Ansbæk, T., Ottaviano, L., Semenova, E., Hansen, O., & Yvind, K. (2018). Wavelength tunable MEMS VCSELs for OCT imaging. In Proceedings of SPIE (Vol. 10552). [105520I ] SPIE - International Society for Optical Engineering. Proceedings of S P I E - International Society for Optical Engineering, Vol.. 10552 https://doi.org/10.1117/12.2289545
Sahoo, Hitesh Kumar ; Ansbæk, Thor ; Ottaviano, Luisa ; Semenova, Elizaveta ; Hansen, Ole ; Yvind, Kresten. / Wavelength tunable MEMS VCSELs for OCT imaging. Proceedings of SPIE. Vol. 10552 SPIE - International Society for Optical Engineering, 2018. (Proceedings of S P I E - International Society for Optical Engineering, Vol. 10552).
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abstract = "MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III-V wafers, which are small, expensive and challenging to work with. Furthermore, the actuating part, i.e., the MEMS, is on the top of the structure which causes a strong dependence on packaging to decrease its sensitivity to the operating environment. This work addresses these design drawbacks and proposes a novel design framework. The proposed device uses a high contrast grating mirror on a Si MEMS stage as the bottom mirror, all of which is defined in an SOI wafer. The SOI wafer is then bonded to an InP III-V wafer with the desired active layers, thereby sealing the MEMS. Finally, the top mirror, a dielectric DBR (7 pairs of TiO2 - SiO2), is deposited on top. The new device is based on a silicon substrate with MEMS defined on a silicon membrane in an enclosed cavity. Thus the device is much more robust than the existing MEMS VCSELs. This design also enables either a two-way actuation on the MEMS or a smaller optical cavity (pull-away design), i.e., wider FSR (Free Spectral Range) to increase the wavelength sweep. Fabrication of the proposed device is outlined and the results of device characterization are reported.",
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Sahoo, HK, Ansbæk, T, Ottaviano, L, Semenova, E, Hansen, O & Yvind, K 2018, Wavelength tunable MEMS VCSELs for OCT imaging. in Proceedings of SPIE. vol. 10552, 105520I , SPIE - International Society for Optical Engineering, Proceedings of S P I E - International Society for Optical Engineering, vol. 10552, Vertical-Cavity Surface-Emitting Lasers XXII, San Francisco, United States, 27/01/2018. https://doi.org/10.1117/12.2289545

Wavelength tunable MEMS VCSELs for OCT imaging. / Sahoo, Hitesh Kumar; Ansbæk, Thor; Ottaviano, Luisa; Semenova, Elizaveta; Hansen, Ole; Yvind, Kresten.

Proceedings of SPIE. Vol. 10552 SPIE - International Society for Optical Engineering, 2018. 105520I (Proceedings of S P I E - International Society for Optical Engineering, Vol. 10552).

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

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AU - Sahoo, Hitesh Kumar

AU - Ansbæk, Thor

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AU - Semenova, Elizaveta

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AU - Yvind, Kresten

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N2 - MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III-V wafers, which are small, expensive and challenging to work with. Furthermore, the actuating part, i.e., the MEMS, is on the top of the structure which causes a strong dependence on packaging to decrease its sensitivity to the operating environment. This work addresses these design drawbacks and proposes a novel design framework. The proposed device uses a high contrast grating mirror on a Si MEMS stage as the bottom mirror, all of which is defined in an SOI wafer. The SOI wafer is then bonded to an InP III-V wafer with the desired active layers, thereby sealing the MEMS. Finally, the top mirror, a dielectric DBR (7 pairs of TiO2 - SiO2), is deposited on top. The new device is based on a silicon substrate with MEMS defined on a silicon membrane in an enclosed cavity. Thus the device is much more robust than the existing MEMS VCSELs. This design also enables either a two-way actuation on the MEMS or a smaller optical cavity (pull-away design), i.e., wider FSR (Free Spectral Range) to increase the wavelength sweep. Fabrication of the proposed device is outlined and the results of device characterization are reported.

AB - MEMS VCSELs are one of the most promising swept source (SS) lasers for optical coherence tomography (OCT) and one of the best candidates for future integration with endoscopes, surgical probes and achieving an integrated OCT system. However, the current MEMS-based SS are processed on the III-V wafers, which are small, expensive and challenging to work with. Furthermore, the actuating part, i.e., the MEMS, is on the top of the structure which causes a strong dependence on packaging to decrease its sensitivity to the operating environment. This work addresses these design drawbacks and proposes a novel design framework. The proposed device uses a high contrast grating mirror on a Si MEMS stage as the bottom mirror, all of which is defined in an SOI wafer. The SOI wafer is then bonded to an InP III-V wafer with the desired active layers, thereby sealing the MEMS. Finally, the top mirror, a dielectric DBR (7 pairs of TiO2 - SiO2), is deposited on top. The new device is based on a silicon substrate with MEMS defined on a silicon membrane in an enclosed cavity. Thus the device is much more robust than the existing MEMS VCSELs. This design also enables either a two-way actuation on the MEMS or a smaller optical cavity (pull-away design), i.e., wider FSR (Free Spectral Range) to increase the wavelength sweep. Fabrication of the proposed device is outlined and the results of device characterization are reported.

KW - MEMS

KW - VCSEL

KW - OCT

KW - Wavelength tunable

KW - Low threshold

U2 - 10.1117/12.2289545

DO - 10.1117/12.2289545

M3 - Article in proceedings

SN - 9781510615892

VL - 10552

T3 - Proceedings of S P I E - International Society for Optical Engineering

BT - Proceedings of SPIE

PB - SPIE - International Society for Optical Engineering

ER -

Sahoo HK, Ansbæk T, Ottaviano L, Semenova E, Hansen O, Yvind K. Wavelength tunable MEMS VCSELs for OCT imaging. In Proceedings of SPIE. Vol. 10552. SPIE - International Society for Optical Engineering. 2018. 105520I . (Proceedings of S P I E - International Society for Optical Engineering, Vol. 10552). https://doi.org/10.1117/12.2289545