Abstract
The Boltzmann equation describing the warm-electron case is discussed and a review is given of the scattering mechanisms for n-Ge and n-Si with relatively low doping levels. Taking into account the known band structure, the Boltzmann equation is solved by a numerical iteration method under the assumption of weak intervalley scattering. It is shown that this condition can be relaxed for special symmetry directions. The warm-electron coefficient beta has been measured in the temperature range from 77 to 250°K by an audio-frequency method based on analysis of nonlinear distortion. Good agreement between measured and calculated results is obtained using the accepted values of the deformation-potential constants.
Original language | English |
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Journal | PHYSICAL REVIEW |
Volume | 156 |
Issue number | 3 |
Pages (from-to) | 834-843 |
ISSN | 0031-899X |
DOIs | |
Publication status | Published - 1967 |