Wafer through-hole interconnections with high vertical wiring densities

Carsten Christensen, Peter Kersten, Sascha Henke, Siebe Bouwstra

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    A novel wafer through-hole technique with a high vertical wiring density is introduced compatible with standard semiconductor processes. The basic idea is to realize metallic interconnection lines on the inclined sidewalls of anisotropically etched through-holes in 〈100〉 oriented silicon substrates. The key process is the application of an electrodeposited photoresist capable to cover such complex three-dimensional structures. Further, conventional deep ultraviolet light exposure enables photolithography on the inclined sidewalls with a good resolution. Interconnections have been achieved with line widths of 20 μm enabling wiring densities up to 250 cm-1.
    Original languageEnglish
    JournalIEEE transactions on components, packaging, and manufacturing technology. Part A (Print)
    VolumeA19
    Issue number4
    Pages (from-to)516-521
    ISSN1070-9886
    DOIs
    Publication statusPublished - 1996

    Fingerprint

    Dive into the research topics of 'Wafer through-hole interconnections with high vertical wiring densities'. Together they form a unique fingerprint.

    Cite this