Abstract
A novel wafer through-hole technique with a high vertical wiring density is introduced compatible with standard semiconductor processes. The basic idea is to realize metallic interconnection lines on the inclined sidewalls of anisotropically etched through-holes in 〈100〉 oriented silicon substrates. The key process is the application of an electrodeposited photoresist capable to cover such complex three-dimensional structures. Further, conventional deep ultraviolet light exposure enables photolithography on the inclined sidewalls with a good resolution. Interconnections have been achieved with line widths of 20 μm enabling wiring densities up to 250 cm-1.
Original language | English |
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Journal | IEEE transactions on components, packaging, and manufacturing technology. Part A (Print) |
Volume | A19 |
Issue number | 4 |
Pages (from-to) | 516-521 |
ISSN | 1070-9886 |
DOIs | |
Publication status | Published - 1996 |