Wafer through-hole interconnections with high vertical wiring densities

Carsten Christensen; Peter Kersten; Sascha Henke; Siebe Bouwstra

doi:10.1109/95.554933

Wafer through-hole interconnections with high vertical wiring densities

Carsten Christensen, Peter Kersten, Sascha Henke, Siebe Bouwstra

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

A novel wafer through-hole technique with a high vertical wiring density is introduced compatible with standard semiconductor processes. The basic idea is to realize metallic interconnection lines on the inclined sidewalls of anisotropically etched through-holes in 〈100〉 oriented silicon substrates. The key process is the application of an electrodeposited photoresist capable to cover such complex three-dimensional structures. Further, conventional deep ultraviolet light exposure enables photolithography on the inclined sidewalls with a good resolution. Interconnections have been achieved with line widths of 20 μm enabling wiring densities up to 250 cm^-1.

Original language	English
Journal	IEEE transactions on components, packaging, and manufacturing technology. Part A (Print)
Volume	A19
Issue number	4
Pages (from-to)	516-521
ISSN	1070-9886
DOIs	https://doi.org/10.1109/95.554933
Publication status	Published - 1996

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title = "Wafer through-hole interconnections with high vertical wiring densities",

abstract = "A novel wafer through-hole technique with a high vertical wiring density is introduced compatible with standard semiconductor processes. The basic idea is to realize metallic interconnection lines on the inclined sidewalls of anisotropically etched through-holes in 〈100〉 oriented silicon substrates. The key process is the application of an electrodeposited photoresist capable to cover such complex three-dimensional structures. Further, conventional deep ultraviolet light exposure enables photolithography on the inclined sidewalls with a good resolution. Interconnections have been achieved with line widths of 20 μm enabling wiring densities up to 250 cm-1.",

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AU - Kersten, Peter

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AU - Bouwstra, Siebe

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N2 - A novel wafer through-hole technique with a high vertical wiring density is introduced compatible with standard semiconductor processes. The basic idea is to realize metallic interconnection lines on the inclined sidewalls of anisotropically etched through-holes in 〈100〉 oriented silicon substrates. The key process is the application of an electrodeposited photoresist capable to cover such complex three-dimensional structures. Further, conventional deep ultraviolet light exposure enables photolithography on the inclined sidewalls with a good resolution. Interconnections have been achieved with line widths of 20 μm enabling wiring densities up to 250 cm-1.

AB - A novel wafer through-hole technique with a high vertical wiring density is introduced compatible with standard semiconductor processes. The basic idea is to realize metallic interconnection lines on the inclined sidewalls of anisotropically etched through-holes in 〈100〉 oriented silicon substrates. The key process is the application of an electrodeposited photoresist capable to cover such complex three-dimensional structures. Further, conventional deep ultraviolet light exposure enables photolithography on the inclined sidewalls with a good resolution. Interconnections have been achieved with line widths of 20 μm enabling wiring densities up to 250 cm-1.

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DO - 10.1109/95.554933

M3 - Journal article

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JO - IEEE transactions on components, packaging, and manufacturing technology. Part A (Print)

JF - IEEE transactions on components, packaging, and manufacturing technology. Part A (Print)

IS - 4

ER -

Wafer through-hole interconnections with high vertical wiring densities

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