Wafer-scale characterization of carrier dynamics in graphene

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

The electronic properties of single-layer graphene, such as surface conductance, carrier concentration, scattering time and mobility, can be characterized in a noncontact manner by THz time-domain spectroscopy. Standard spectroscopic imaging reveals the AC conductance over large areas with a few hundred μm resolution, and spectroscopic imaging on back-gated graphene allows for extraction of both the carrier concentration and the mobility. We find that spatial variations of the conductance of single-layer CVD-grown graphene are predominantly due to variations in mobility rather than in carrier concentration.
Original languageEnglish
Title of host publicationProceedings of 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves
Number of pages2
PublisherIEEE
Publication date2015
Pages1-2
ISBN (Print)9781479982721
DOIs
Publication statusPublished - 2015
Event40th International Conference on Infrared, Millimeter, and Terahertz Waves - Chinese University of Hong Kong, Hong Kong
Duration: 23 Aug 201528 Aug 2015

Conference

Conference40th International Conference on Infrared, Millimeter, and Terahertz Waves
LocationChinese University of Hong Kong
Country/TerritoryHong Kong
Period23/08/201528/08/2015

Keywords

  • Communication, Networking and Broadcast Technologies
  • Engineered Materials, Dielectrics and Plasmas
  • Fields, Waves and Electromagnetics
  • Photonics and Electrooptics
  • Films
  • Graphene
  • Imaging
  • Logic gates
  • Scattering
  • Spectroscopy
  • Time-domain analysis

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