Voltage modulation scanned probe oxidation

Francesc Perez-Murano, Karen Birkelund, Kiyoshi Morimoto, John A. Dagata

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

Scanned probe microscope ~SPM! oxidation with voltage modulation leads to a significant enhancement of the oxide growth rate, improvement of the aspect ratio of oxide features, and control of the structural and electrical properties of the SPM oxide. Variation of the voltage-pulse parameters confirms that the oxide dimensions can be controlled sensitively over a wide range of pulse parameters and that voltage modulation overcomes the self-limiting character of SPM oxidation by reducing the buildup of space charge within the oxide during growth. The enhancement can be used to increase the writing speed or lower the voltage, both beneficial for practical nanoelectronics fabrication.
Original languageEnglish
JournalApplied Physics Letters
Volume75
Issue number2
Pages (from-to)199-201
ISSN0003-6951
Publication statusPublished - 1999
Externally publishedYes

Cite this

Perez-Murano, F., Birkelund, K., Morimoto, K., & Dagata, J. A. (1999). Voltage modulation scanned probe oxidation. Applied Physics Letters, 75(2), 199-201.