Abstract
Scanned probe microscope ~SPM! oxidation with voltage modulation leads to a significant
enhancement of the oxide growth rate, improvement of the aspect ratio of oxide features, and control
of the structural and electrical properties of the SPM oxide. Variation of the voltage-pulse
parameters confirms that the oxide dimensions can be controlled sensitively over a wide range of
pulse parameters and that voltage modulation overcomes the self-limiting character of SPM
oxidation by reducing the buildup of space charge within the oxide during growth. The enhancement
can be used to increase the writing speed or lower the voltage, both beneficial for practical
nanoelectronics fabrication.
Original language | English |
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Journal | Applied Physics Letters |
Volume | 75 |
Issue number | 2 |
Pages (from-to) | 199-201 |
ISSN | 0003-6951 |
Publication status | Published - 1999 |
Externally published | Yes |