Vlijanie dizajna geterostruktury na porog generacii lazera s mnozhestvennymi kvantovymi jamami InGaN/GaN na kremnii

Translated title of the contribution: Influence of the heterostructure design on the lasing threshold of the multiple quantum wells laser on silicon

Andrei Andryieuski

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    Abstract

    This article is devoted to the investigation of the influence of heterostructure design on lasing characteristics of the InGaN/GaN multiple quantum well laser on silicon substrate, performed by computer modelling. It is shown that heterogeneity in a growth process can lead to different far-field patterns, that is related to the alteration of lasing threshold for different modes. It is shown that lasing threshold be reduced by variation of the layer thickness.
    Translated title of the contributionInfluence of the heterostructure design on the lasing threshold of the multiple quantum wells laser on silicon
    Original languageRussian
    JournalVestnik
    Volume1
    Pages (from-to)45-48
    ISSN0321-0367
    Publication statusPublished - 2008

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