Abstract
This article is devoted to the investigation of the influence of heterostructure design on lasing characteristics of the InGaN/GaN multiple quantum well laser on silicon substrate, performed by computer modelling. It is shown that heterogeneity in a growth process can lead to different far-field patterns, that is related to the alteration of lasing threshold for different modes. It is shown that lasing threshold be reduced by variation of the layer thickness.
| Translated title of the contribution | Influence of the heterostructure design on the lasing threshold of the multiple quantum wells laser on silicon |
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| Original language | Russian |
| Journal | Vestnik |
| Volume | 1 |
| Pages (from-to) | 45-48 |
| ISSN | 0321-0367 |
| Publication status | Published - 2008 |