Visible light emission from porous silicon carbide

Haiyan Ou; Weifang Lu

doi:10.1109/ICCChinaW.2017.8355266

Visible light emission from porous silicon carbide

Haiyan Ou (Invited author)
, Weifang Lu (Invited author)

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small lattice mismatch. Secondly, SiC material is abundant, containing no rear-earth element material as commercial phosphor. In this paper, fabrication of porous SiC is introduced, and their morphology and photoluminescence are characterized. Additionally, the carrier lifetime of the porous SiC is measured by time-resolved photoluminescence. The ultrashort lifetime in the order of ~70ps indicates porous SiC is very promising for the application in the ultrafast visible light communications.

Original language	English
Title of host publication	Proceedings of International Conference on Communications in China 2017
Number of pages	4
Publisher	IEEE
Publication date	2017
ISBN (Print)	9781538664032
DOIs	https://doi.org/10.1109/ICCChinaW.2017.8355266
Publication status	Published - 2017
Event	International Conference on Communications in China 2017 - Qingdao, China Duration: 22 Oct 2017 → 22 Oct 2017

Conference

Conference	International Conference on Communications in China 2017
Country/Territory	China
City	Qingdao
Period	22/10/2017 → 22/10/2017

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@inproceedings{41ddda44d74c4b88a6fde52d6527f3ae,

title = "Visible light emission from porous silicon carbide",

abstract = "Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small lattice mismatch. Secondly, SiC material is abundant, containing no rear-earth element material as commercial phosphor. In this paper, fabrication of porous SiC is introduced, and their morphology and photoluminescence are characterized. Additionally, the carrier lifetime of the porous SiC is measured by time-resolved photoluminescence. The ultrashort lifetime in the order of \textasciitilde{}70ps indicates porous SiC is very promising for the application in the ultrafast visible light communications. ",

author = "Haiyan Ou and Weifang Lu",

year = "2017",

doi = "10.1109/ICCChinaW.2017.8355266",

language = "English",

isbn = "9781538664032 ",

booktitle = "Proceedings of International Conference on Communications in China 2017",

publisher = "IEEE",

address = "United States",

note = "International Conference on Communications in China 2017, ICCC 2017 ; Conference date: 22-10-2017 Through 22-10-2017",

}

TY - GEN

T1 - Visible light emission from porous silicon carbide

AU - Ou, Haiyan

AU - Lu, Weifang

PY - 2017

Y1 - 2017

N2 - Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small lattice mismatch. Secondly, SiC material is abundant, containing no rear-earth element material as commercial phosphor. In this paper, fabrication of porous SiC is introduced, and their morphology and photoluminescence are characterized. Additionally, the carrier lifetime of the porous SiC is measured by time-resolved photoluminescence. The ultrashort lifetime in the order of ~70ps indicates porous SiC is very promising for the application in the ultrafast visible light communications.

AB - Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small lattice mismatch. Secondly, SiC material is abundant, containing no rear-earth element material as commercial phosphor. In this paper, fabrication of porous SiC is introduced, and their morphology and photoluminescence are characterized. Additionally, the carrier lifetime of the porous SiC is measured by time-resolved photoluminescence. The ultrashort lifetime in the order of ~70ps indicates porous SiC is very promising for the application in the ultrafast visible light communications.

U2 - 10.1109/ICCChinaW.2017.8355266

DO - 10.1109/ICCChinaW.2017.8355266

M3 - Article in proceedings

SN - 9781538664032

BT - Proceedings of International Conference on Communications in China 2017

PB - IEEE

T2 - International Conference on Communications in China 2017

Y2 - 22 October 2017 through 22 October 2017

ER -

Visible light emission from porous silicon carbide

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