Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient

Daniel Southcott Engstrøm; Nalin L Rupesinghe; Kenneth B K Teo; William I Milne; Peter Bøggild

doi:10.1088/0960-1317/21/1/015004

Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient

Daniel Southcott Engstrøm, Nalin L Rupesinghe, Kenneth B K Teo, William I Milne, Peter Bøggild

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temperature was determined on the entire microheater structure, and the simulated temperatures were verified by micro-Raman spectroscopy. The microheaters provided a temperature gradient along which VACNTs were grown at 575–800 °C simultaneously. The VACNT growth activation energy was determined to 0.86 eV from the VACNT growth rate variation along the microheater's temperature gradient.

Original language	English
Journal	Journal of Micromechanics and Microengineering
Volume	21
Issue number	1
Pages (from-to)	015004
ISSN	0960-1317
DOIs	https://doi.org/10.1088/0960-1317/21/1/015004
Publication status	Published - 2011

Keywords

Methods of nanofabrication and processing
Other nonmetallic inorganics
Nanotubes

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10.1088/0960-1317/21/1/015004

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Engstrøm, D. S., Rupesinghe, N. L., Teo, K. B. K., Milne, W. I., & Bøggild, P. (2011). Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient. Journal of Micromechanics and Microengineering, 21(1), 015004. https://doi.org/10.1088/0960-1317/21/1/015004

Engstrøm, Daniel Southcott ; Rupesinghe, Nalin L ; Teo, Kenneth B K ; Milne, William I ; Bøggild, Peter. / Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient. In: Journal of Micromechanics and Microengineering. 2011 ; Vol. 21, No. 1. pp. 015004.

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abstract = "Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temperature was determined on the entire microheater structure, and the simulated temperatures were verified by micro-Raman spectroscopy. The microheaters provided a temperature gradient along which VACNTs were grown at 575–800 °C simultaneously. The VACNT growth activation energy was determined to 0.86 eV from the VACNT growth rate variation along the microheater's temperature gradient.",

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Engstrøm, DS, Rupesinghe, NL, Teo, KBK, Milne, WI & Bøggild, P 2011, 'Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient', Journal of Micromechanics and Microengineering, vol. 21, no. 1, pp. 015004. https://doi.org/10.1088/0960-1317/21/1/015004

Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient. / Engstrøm, Daniel Southcott; Rupesinghe, Nalin L; Teo, Kenneth B K; Milne, William I; Bøggild, Peter.

In: Journal of Micromechanics and Microengineering, Vol. 21, No. 1, 2011, p. 015004.

Research output: Contribution to journal › Journal article › Research › peer-review

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AU - Rupesinghe, Nalin L

AU - Teo, Kenneth B K

AU - Milne, William I

AU - Bøggild, Peter

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AB - Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temperature was determined on the entire microheater structure, and the simulated temperatures were verified by micro-Raman spectroscopy. The microheaters provided a temperature gradient along which VACNTs were grown at 575–800 °C simultaneously. The VACNT growth activation energy was determined to 0.86 eV from the VACNT growth rate variation along the microheater's temperature gradient.

KW - Methods of nanofabrication and processing

KW - Other nonmetallic inorganics

KW - Nanotubes

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DO - 10.1088/0960-1317/21/1/015004

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SN - 0960-1317

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