Abstract
Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temperature was determined on the entire microheater structure, and the simulated temperatures were verified by micro-Raman spectroscopy. The microheaters provided a temperature gradient along which VACNTs were grown at 575–800 °C simultaneously. The VACNT growth activation energy was determined to 0.86 eV from the VACNT growth rate variation along the microheater's temperature gradient.
Original language | English |
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Journal | Journal of Micromechanics and Microengineering |
Volume | 21 |
Issue number | 1 |
Pages (from-to) | 015004 |
ISSN | 0960-1317 |
DOIs | |
Publication status | Published - 2011 |
Keywords
- Methods of nanofabrication and processing
- Other nonmetallic inorganics
- Nanotubes