Vertically aligned CNT growth on a microfabricated silicon heater with integrated temperature control—determination of the activation energy from a continuous thermal gradient

Daniel Southcott Engstrøm, Nalin L Rupesinghe, Kenneth B K Teo, William I Milne, Peter Bøggild

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    Silicon microheaters for local growth of a vertically aligned carbon nanotube (VACNT) were fabricated. The microheaters had a four-point-probe structure that measured the silicon conductivity variations in the heated region which is a measure of the temperature. Through FEM simulations the temperature was determined on the entire microheater structure, and the simulated temperatures were verified by micro-Raman spectroscopy. The microheaters provided a temperature gradient along which VACNTs were grown at 575–800 °C simultaneously. The VACNT growth activation energy was determined to 0.86 eV from the VACNT growth rate variation along the microheater's temperature gradient.

    Original languageEnglish
    JournalJournal of Micromechanics and Microengineering
    Volume21
    Issue number1
    Pages (from-to)015004
    ISSN0960-1317
    DOIs
    Publication statusPublished - 2011

    Keywords

    • Methods of nanofabrication and processing
    • Other nonmetallic inorganics
    • Nanotubes

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