Validation of Nonlinear Bipolar Transistor Model by Small-Signal Measurements

Jens Vidkjær; V. Porra; J. Zhu; T Huttunen

doi:10.1109/EUMA.1992.335870

Validation of Nonlinear Bipolar Transistor Model by Small-Signal Measurements

Jens Vidkjær, V. Porra, J. Zhu, T Huttunen

Aalto University

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

A new method for the validity analysis of nonlinear transistor models is presented based on DC-and small-signal S-parameter measurements and realistic consideration of the measurement and de-embedding errors and singularities of the small-signal equivalent circuit. As an example, some analysis results for an extended Gummel Poon model are presented in the case of a UHF bipolar power transistor.

Original language	English
Title of host publication	Proceedings of the 22nd European Microwave Conference
Volume	Volume 2
Publisher	IEEE
Publication date	1992
Pages	1217-1222
DOIs	https://doi.org/10.1109/EUMA.1992.335870
Publication status	Published - 1992
Event	22nd European Microwave Conference - Helsinki, Finland Duration: 5 Sept 1992 → 9 Sept 1992 Conference number: 22 http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=4135427

Conference

Conference	22nd European Microwave Conference
Number	22
Country/Territory	Finland
City	Helsinki
Period	05/09/1992 → 09/09/1992
Internet address	http://ieeexplore.ieee.org/xpl/tocresult.jsp?isnumber=4135427

Bibliographical note

Copyright: 1992 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Validation of Nonlinear Bipolar Transistor Model by Small-Signal Measurements",

abstract = "A new method for the validity analysis of nonlinear transistor models is presented based on DC-and small-signal S-parameter measurements and realistic consideration of the measurement and de-embedding errors and singularities of the small-signal equivalent circuit. As an example, some analysis results for an extended Gummel Poon model are presented in the case of a UHF bipolar power transistor.",

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AU - Porra, V.

AU - Zhu, J.

AU - Huttunen, T

N1 - Conference code: 22

PY - 1992

Y1 - 1992

N2 - A new method for the validity analysis of nonlinear transistor models is presented based on DC-and small-signal S-parameter measurements and realistic consideration of the measurement and de-embedding errors and singularities of the small-signal equivalent circuit. As an example, some analysis results for an extended Gummel Poon model are presented in the case of a UHF bipolar power transistor.

AB - A new method for the validity analysis of nonlinear transistor models is presented based on DC-and small-signal S-parameter measurements and realistic consideration of the measurement and de-embedding errors and singularities of the small-signal equivalent circuit. As an example, some analysis results for an extended Gummel Poon model are presented in the case of a UHF bipolar power transistor.

U2 - 10.1109/EUMA.1992.335870

DO - 10.1109/EUMA.1992.335870

M3 - Article in proceedings

VL - Volume 2

SP - 1217

EP - 1222

BT - Proceedings of the 22nd European Microwave Conference

PB - IEEE

T2 - 22nd European Microwave Conference

Y2 - 5 September 1992 through 9 September 1992

ER -

Validation of Nonlinear Bipolar Transistor Model by Small-Signal Measurements

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