Using transient sheath indeuced by short high-voltage pulse for uniform plasma ion implantation

N. Holtzer, H. Sugai, T. Saito, Eugen Stamate

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title = "Using transient sheath indeuced by short high-voltage pulse for uniform plasma ion implantation",

keywords = "Energiteknologier p{\aa} vej",

author = "N. Holtzer and H. Sugai and T. Saito and Eugen Stamate",

year = "2007",

doi = "10.1143/JJAP.46.L858",

language = "English",

volume = "46",

pages = "L858--L860",

journal = "Jap. J. Appl. Phys. Pt. 2",

number = "33-35",

}

TY - JOUR

T1 - Using transient sheath indeuced by short high-voltage pulse for uniform plasma ion implantation

AU - Holtzer, N.

AU - Sugai, H.

AU - Saito, T.

AU - Stamate, Eugen

PY - 2007

Y1 - 2007

KW - Energiteknologier på vej

U2 - 10.1143/JJAP.46.L858

DO - 10.1143/JJAP.46.L858

M3 - Journal article

VL - 46

SP - L858-L860

JO - Jap. J. Appl. Phys. Pt. 2

JF - Jap. J. Appl. Phys. Pt. 2

IS - 33-35

ER -