Unravelling the role of inelastic tunneling into pristine and defected graphene

Mattias Lau Nøhr Palsgaard, Nick Papior Andersen, Mads Brandbyge

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Abstract

We present a first principles method for calculating the inelastic electron tunneling spectroscopy (IETS) on gated graphene. We reproduce experiments on pristine graphene and point out the importance of including several phonon modes to correctly estimate the local doping from IETS. We demonstrate how the IETS of typical imperfections in graphene can yield characteristic fingerprints revealing, e.g., adsorbate species or local buckling. Our results show how care is needed when interpreting scanning tunneling microscopy images of defects due to suppression of the elastic tunneling on graphene.
Original languageEnglish
JournalPhysical Review B
Volume91
Issue number12
Pages (from-to)121403
Number of pages5
ISSN0163-1829
DOIs
Publication statusPublished - 2015

Bibliographical note

©2015 American Physical Society

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