Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

Xiaohan Wu; Ruijing Ge; Yuqian Gu; Emmanuel Okogbue; Jianping Shi; Abhay Shivayogimath; Peter Boggild; Timothy J. Booth; Yanfeng Zhang; Yeonwoong Jung; Jack C. Lee; Deji Akinwande

doi:10.1109/EDTM50988.2021.9420947

Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

Xiaohan Wu, Ruijing Ge, Yuqian Gu, Emmanuel Okogbue, Jianping Shi, Abhay Shivayogimath, Peter Boggild, Timothy J. Booth, Yanfeng Zhang, Yeonwoong Jung, Jack C. Lee, Deji Akinwande

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics. A unique conductive-point random access memory (CPRAM) effect is used to explain the switching mechanisms, supported by experimental results from current-sweep measurements.

Original language	English
Title of host publication	Proceedings of 2021 5th IEEE Electron Devices Technology and Manufacturing Conference
Number of pages	3
Publisher	IEEE
Publication date	2021
Article number	9420947
ISBN (Electronic)	9781728181769
DOIs	https://doi.org/10.1109/EDTM50988.2021.9420947
Publication status	Published - 2021
Event	5th IEEE Electron Devices Technology and Manufacturing Conference - Chengdu, China Duration: 8 Apr 2021 → 11 Apr 2021 Conference number: 5

Conference

Conference	5th IEEE Electron Devices Technology and Manufacturing Conference
Number	5
Country/Territory	China
City	Chengdu
Period	08/04/2021 → 11/04/2021

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Wu, X., Ge, R., Gu, Y., Okogbue, E., Shi, J., Shivayogimath, A., Boggild, P., Booth, T. J., Zhang, Y., Jung, Y., Lee, J. C., & Akinwande, D. (2021). Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect. In Proceedings of 2021 5th IEEE Electron Devices Technology and Manufacturing Conference Article 9420947 IEEE. https://doi.org/10.1109/EDTM50988.2021.9420947

@inproceedings{073d31dd65c047929a77f618290f6c8b,

title = "Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect",

abstract = "Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics. A unique conductive-point random access memory (CPRAM) effect is used to explain the switching mechanisms, supported by experimental results from current-sweep measurements. ",

author = "Xiaohan Wu and Ruijing Ge and Yuqian Gu and Emmanuel Okogbue and Jianping Shi and Abhay Shivayogimath and Peter Boggild and Booth, {Timothy J.} and Yanfeng Zhang and Yeonwoong Jung and Lee, {Jack C.} and Deji Akinwande",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 ; Conference date: 08-04-2021 Through 11-04-2021",

year = "2021",

doi = "10.1109/EDTM50988.2021.9420947",

language = "English",

booktitle = "Proceedings of 2021 5th IEEE Electron Devices Technology and Manufacturing Conference",

publisher = "IEEE",

address = "United States",

}

Wu, X, Ge, R, Gu, Y, Okogbue, E, Shi, J, Shivayogimath, A, Boggild, P , Booth, TJ, Zhang, Y, Jung, Y, Lee, JC & Akinwande, D 2021, Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect. in Proceedings of 2021 5th IEEE Electron Devices Technology and Manufacturing Conference., 9420947, IEEE, 5th IEEE Electron Devices Technology and Manufacturing Conference, Chengdu, China, 08/04/2021. https://doi.org/10.1109/EDTM50988.2021.9420947

Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect. / Wu, Xiaohan; Ge, Ruijing; Gu, Yuqian et al.
Proceedings of 2021 5th IEEE Electron Devices Technology and Manufacturing Conference. IEEE, 2021. 9420947.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

TY - GEN

T1 - Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

AU - Wu, Xiaohan

AU - Ge, Ruijing

AU - Gu, Yuqian

AU - Okogbue, Emmanuel

AU - Shi, Jianping

AU - Shivayogimath, Abhay

AU - Boggild, Peter

AU - Booth, Timothy J.

AU - Zhang, Yanfeng

AU - Jung, Yeonwoong

AU - Lee, Jack C.

AU - Akinwande, Deji

N1 - Conference code: 5

PY - 2021

Y1 - 2021

N2 - Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics. A unique conductive-point random access memory (CPRAM) effect is used to explain the switching mechanisms, supported by experimental results from current-sweep measurements.

AB - Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large on/off ratio, fast switching speed and forming free characteristics. A unique conductive-point random access memory (CPRAM) effect is used to explain the switching mechanisms, supported by experimental results from current-sweep measurements.

U2 - 10.1109/EDTM50988.2021.9420947

DO - 10.1109/EDTM50988.2021.9420947

M3 - Article in proceedings

AN - SCOPUS:85106484470

BT - Proceedings of 2021 5th IEEE Electron Devices Technology and Manufacturing Conference

PB - IEEE

T2 - 5th IEEE Electron Devices Technology and Manufacturing Conference

Y2 - 8 April 2021 through 11 April 2021

ER -

Universal Non-Volatile Resistive Switching Behavior in 2D Metal Dichalcogenides Featuring Unique Conductive-Point Random Access Memory Effect

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