Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

B. Vincent; F. Gencarelli; H. Bender; C. Merckling; B. Douhard; Dirch Hjorth Petersen; Ole Hansen; H. H. Henrichsen; J. Meersschaut; W. Vandervorst; M. Heyns; R. Loo; M. Caymax

doi:10.1063/1.3645620

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

B. Vincent
, F. Gencarelli
, H. Bender
, C. Merckling
, B. Douhard
, Dirch Hjorth Petersen
, Ole Hansen
, H. H. Henrichsen
, J. Meersschaut
, W. Vandervorst
, M. Heyns
, R. Loo
, M. Caymax

Center for Individual Nanoparticle Functionality

Interuniversitair Micro-Elektronica Centrum
Université catholique de Louvain
Technical University of Denmark

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay fully strained after 30 min anneal in N-2 at 500 degrees C.; Ge-Sn interdiffusion is seen at 500 degrees C but not at lower temperature. B is 100% active in the in-situ GeSn:B layers up to a concentration of 1.7 x 10(19) cm(-3). GeSn:B provides slightly lower Hall hole mobility values than in pure p-type Ge especially for low B concentrations. (C) 2011 American Institute of Physics [doi.10.1063/1.3645620]

Original language	English
Journal	Applied Physics Letters
Volume	99
Issue number	15
Pages (from-to)	152103
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3645620
Publication status	Published - 2011

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Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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Vincent, B., Gencarelli, F., Bender, H., Merckling, C., Douhard, B., Petersen, D. H., Hansen, O., Henrichsen, H. H., Meersschaut, J., Vandervorst, W., Heyns, M., Loo, R., & Caymax, M. (2011). Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition. Applied Physics Letters, 99(15), 152103. https://doi.org/10.1063/1.3645620

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title = "Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition",

abstract = "In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8\%. Those metastable layers stay fully strained after 30 min anneal in N-2 at 500 degrees C.; Ge-Sn interdiffusion is seen at 500 degrees C but not at lower temperature. B is 100\% active in the in-situ GeSn:B layers up to a concentration of 1.7 x 10(19) cm(-3). GeSn:B provides slightly lower Hall hole mobility values than in pure p-type Ge especially for low B concentrations. (C) 2011 American Institute of Physics [doi.10.1063/1.3645620]",

author = "B. Vincent and F. Gencarelli and H. Bender and C. Merckling and B. Douhard and Petersen, \{Dirch Hjorth\} and Ole Hansen and Henrichsen, \{H. H.\} and J. Meersschaut and W. Vandervorst and M. Heyns and R. Loo and M. Caymax",

note = "Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "2011",

doi = "10.1063/1.3645620",

language = "English",

volume = "99",

pages = "152103",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

AU - Vincent, B.

AU - Gencarelli, F.

AU - Bender, H.

AU - Merckling, C.

AU - Douhard, B.

AU - Petersen, Dirch Hjorth

AU - Hansen, Ole

AU - Henrichsen, H. H.

AU - Meersschaut, J.

AU - Vandervorst, W.

AU - Heyns, M.

AU - Loo, R.

AU - Caymax, M.

N1 - Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2011

Y1 - 2011

N2 - In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay fully strained after 30 min anneal in N-2 at 500 degrees C.; Ge-Sn interdiffusion is seen at 500 degrees C but not at lower temperature. B is 100% active in the in-situ GeSn:B layers up to a concentration of 1.7 x 10(19) cm(-3). GeSn:B provides slightly lower Hall hole mobility values than in pure p-type Ge especially for low B concentrations. (C) 2011 American Institute of Physics [doi.10.1063/1.3645620]

AB - In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay fully strained after 30 min anneal in N-2 at 500 degrees C.; Ge-Sn interdiffusion is seen at 500 degrees C but not at lower temperature. B is 100% active in the in-situ GeSn:B layers up to a concentration of 1.7 x 10(19) cm(-3). GeSn:B provides slightly lower Hall hole mobility values than in pure p-type Ge especially for low B concentrations. (C) 2011 American Institute of Physics [doi.10.1063/1.3645620]

U2 - 10.1063/1.3645620

DO - 10.1063/1.3645620

M3 - Journal article

SN - 0003-6951

VL - 99

SP - 152103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

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