Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

B. Vincent, F. Gencarelli, H. Bender, C. Merckling, B. Douhard, Dirch Hjorth Petersen, Ole Hansen, H. H. Henrichsen, J. Meersschaut, W. Vandervorst, M. Heyns, R. Loo, M. Caymax

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Abstract

In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay fully strained after 30 min anneal in N-2 at 500 degrees C.; Ge-Sn interdiffusion is seen at 500 degrees C but not at lower temperature. B is 100% active in the in-situ GeSn:B layers up to a concentration of 1.7 x 10(19) cm(-3). GeSn:B provides slightly lower Hall hole mobility values than in pure p-type Ge especially for low B concentrations. (C) 2011 American Institute of Physics [doi.10.1063/1.3645620]
Original languageEnglish
JournalApplied Physics Letters
Volume99
Issue number15
Pages (from-to)152103
ISSN0003-6951
DOIs
Publication statusPublished - 2011

Bibliographical note

Copyright (2011) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Cite this

Vincent, B., Gencarelli, F., Bender, H., Merckling, C., Douhard, B., Petersen, D. H., Hansen, O., Henrichsen, H. H., Meersschaut, J., Vandervorst, W., Heyns, M., Loo, R., & Caymax, M. (2011). Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition. Applied Physics Letters, 99(15), 152103. https://doi.org/10.1063/1.3645620