Understanding the 3D structure of GaAs⟨111⟩B nanowires

Lisa S. Karlsson, Kimberly A. Dick, Jakob Birkedal Wagner, Jan-Olle Malm, Knut Deppert, Lars Samuelson, L. Reine Wallenberg

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The effects of lamellar twinning in epitaxial particle-assisted GaAs <111 > B nanowires are investigated in an extensive high resolution electron microscopy (HRTEM) study of the low index zones <100 >, <110 >, <111 > and <112 >. As these directions are non-parallel to the (111) twin planes we find that the twin segments exhibit two different zone axes as a consequence of twinning. In the first three cases the alternative zones were found to be <122 > <114 > and <115 >. These findings are supported by a comparison of experimental HRTEM images and multi-slice simulations along with fast Fourier transform mapping. From the appearance of non-overlapping regions we conclude that the nanowires are bound by {111} facets only. The twin formation and the development of the stable side facets are discussed.
Original languageEnglish
Article number485717
Issue number48
Number of pages10
Publication statusPublished - 2007
Externally publishedYes

Cite this

Karlsson, L. S., Dick, K. A., Wagner, J. B., Malm, J-O., Deppert, K., Samuelson, L., & Wallenberg, L. R. (2007). Understanding the 3D structure of GaAs⟨111⟩B nanowires. Nanotechnology, 18(48), [485717]. https://doi.org/10.1088/0957-4484/18/48/485717