Uncertainty Estimation in SiGe HBT Small-Signal Modeling

Syed M. Masood; Tom Keinicke Johansen; Jens Vidkjær; Viktor Krozer

Uncertainty Estimation in SiGe HBT Small-Signal Modeling

Syed M. Masood, Tom Keinicke Johansen, Jens Vidkjær, Viktor Krozer

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Abstract

An uncertainty estimation and sensitivity analysis is performed on multi-step de-embedding for SiGe HBT small-signal modeling. The uncertainty estimation in combination with uncertainty model for deviation in measured S-parameters, quantifies the possible error value in de-embedded two-port parameters (Y and Z - parameters). The analysis is applied to a 0.35 μm 60 GHz fT SiGe HBT in frequency range 45 MHz to 26 GHz.

Original language	English
Title of host publication	2005 European Gallium Arsenide and other Compound Semiconductors Application Symposium
Publisher	IEEE
Publication date	2005
ISBN (Print)	88-902012-0-7
Publication status	Published - 2005
Event	European Gallium Arsenide and Other Semiconductor Application Symposium - Paris, France Duration: 3 Oct 2005 → 4 Oct 2005 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=10684

Conference

Conference	European Gallium Arsenide and Other Semiconductor Application Symposium
Country/Territory	France
City	Paris
Period	03/10/2005 → 04/10/2005
Internet address	http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=10684

Bibliographical note

Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Uncertainty Estimation in SiGe HBT Small-Signal Modeling",

abstract = "An uncertainty estimation and sensitivity analysis is performed on multi-step de-embedding for SiGe HBT small-signal modeling. The uncertainty estimation in combination with uncertainty model for deviation in measured S-parameters, quantifies the possible error value in de-embedded two-port parameters (Y and Z - parameters). The analysis is applied to a 0.35 μm 60 GHz fT SiGe HBT in frequency range 45 MHz to 26 GHz.",

author = "Masood, {Syed M.} and Johansen, {Tom Keinicke} and Jens Vidkj{\ae}r and Viktor Krozer",

note = "Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE; European Gallium Arsenide and Other Semiconductor Application Symposium, EGAAS 2005 ; Conference date: 03-10-2005 Through 04-10-2005",

year = "2005",

language = "English",

isbn = "88-902012-0-7",

booktitle = "2005 European Gallium Arsenide and other Compound Semiconductors Application Symposium",

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AU - Masood, Syed M.

AU - Johansen, Tom Keinicke

AU - Vidkjær, Jens

AU - Krozer, Viktor

N1 - Copyright: 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 2005

Y1 - 2005

N2 - An uncertainty estimation and sensitivity analysis is performed on multi-step de-embedding for SiGe HBT small-signal modeling. The uncertainty estimation in combination with uncertainty model for deviation in measured S-parameters, quantifies the possible error value in de-embedded two-port parameters (Y and Z - parameters). The analysis is applied to a 0.35 μm 60 GHz fT SiGe HBT in frequency range 45 MHz to 26 GHz.

AB - An uncertainty estimation and sensitivity analysis is performed on multi-step de-embedding for SiGe HBT small-signal modeling. The uncertainty estimation in combination with uncertainty model for deviation in measured S-parameters, quantifies the possible error value in de-embedded two-port parameters (Y and Z - parameters). The analysis is applied to a 0.35 μm 60 GHz fT SiGe HBT in frequency range 45 MHz to 26 GHz.

M3 - Article in proceedings

SN - 88-902012-0-7

BT - 2005 European Gallium Arsenide and other Compound Semiconductors Application Symposium

PB - IEEE

T2 - European Gallium Arsenide and Other Semiconductor Application Symposium

Y2 - 3 October 2005 through 4 October 2005

ER -

Uncertainty Estimation in SiGe HBT Small-Signal Modeling

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