Abstract
Metallic vanadium ultrathin films deposited on the TiO2 (110) surface are easily oxidised to VO2 when they react
with O2 in the high vacuum pressure range. We have found that the oxidation can be stopped at VOx (x#1) when
annealing of the metal film is carried out in UHV, by exploiting the reaction with bulk-to-surface diffusing oxygen.
By adopting carefully optimised experimental conditions (e.g. metal film thickness and annealing temperature), locally
ordered VOx films with a thickness of up to 5 ML can be prepared. X-ray photoelectron spectroscopy and anglescanned
photoelectron diffraction, as an in situ structural characterisation tool, have proven to be extremely useful in
order to find optimised conditions for the whole process. © 1999 Elsevier Science B.V. All rights reserved.
Keyword: Titanium oxide,Photoelectron diffraction,X-ray photoelectron spectroscopy,Vanadium oxide,Epitaxy
Keyword: Titanium oxide,Photoelectron diffraction,X-ray photoelectron spectroscopy,Vanadium oxide,Epitaxy
Original language | English |
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Journal | Surface Science |
Volume | 436 |
Pages (from-to) | 227-236 |
ISSN | 0039-6028 |
DOIs | |
Publication status | Published - 1999 |
Externally published | Yes |