TY - JOUR
T1 - Ultrasonically Powered and Controlled Microsystem for Dual-Wavelength Optogenetics With a Multiload Regulation Scheme
AU - Rashidi, Amin
AU - Zamani, Milad
AU - Mondal, Tanmay
AU - Hosseini, Seyedsina
AU - Laursen, Kjeld
AU - Corbet, Brian
AU - Moradi, Farshad
PY - 2023
Y1 - 2023
N2 - This letter presents an ultrasonically powered dual-wavelength optogenetic device that targets simultaneous excitation and inhibition of neural activities, or in a broader sense, optical stimulation in two distinct wavelengths for targeting different populations of neurons. This can be applied to a variety of neurological disorders. The device features a load regulator circuit that shares the available power budget between two LEDs in a power-efficient and controlled way suppressing the need for adaptive matching and overvoltage protection circuits. Furthermore, the regulator circuit is capable of detecting power burst availability on the device and generating a control signal, accordingly. For 5.25 -mW acoustic power at the device's surface, the rectified voltage, and the total current load of the system are regulated to 2.79 V and 600A , respectively. The maximum chip and device efficiencies of 92.5% and 31.8% are measured, respectively. The total die area in 180 nm CMOS technology nose and the estimated system volume are 0.16 mm2 and 0.572 mm3, respectively.
AB - This letter presents an ultrasonically powered dual-wavelength optogenetic device that targets simultaneous excitation and inhibition of neural activities, or in a broader sense, optical stimulation in two distinct wavelengths for targeting different populations of neurons. This can be applied to a variety of neurological disorders. The device features a load regulator circuit that shares the available power budget between two LEDs in a power-efficient and controlled way suppressing the need for adaptive matching and overvoltage protection circuits. Furthermore, the regulator circuit is capable of detecting power burst availability on the device and generating a control signal, accordingly. For 5.25 -mW acoustic power at the device's surface, the rectified voltage, and the total current load of the system are regulated to 2.79 V and 600A , respectively. The maximum chip and device efficiencies of 92.5% and 31.8% are measured, respectively. The total die area in 180 nm CMOS technology nose and the estimated system volume are 0.16 mm2 and 0.572 mm3, respectively.
U2 - 10.1109/LSSC.2023.3239601
DO - 10.1109/LSSC.2023.3239601
M3 - Journal article
SN - 2573-9603
VL - 6
SP - 33
EP - 36
JO - IEEE Solid-State Circuits Letters
JF - IEEE Solid-State Circuits Letters
ER -