Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

Esko Sebastian Forsén; G. Abadal; S. Ghatnekar-Nilsson; J. Teva; J. Verd; Rasmus Kousholt Sandberg; Winnie Edith Svendsen; F. Perez-Murano; J. Esteve; E. Figueras; F. Campabadal; L. Montelius; N. Barniol; Anja Boisen

doi:10.1063/1.1999838

Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

Esko Sebastian Forsén, G. Abadal, S. Ghatnekar-Nilsson, J. Teva, J. Verd, Rasmus Kousholt Sandberg, Winnie Edith Svendsen, F. Perez-Murano, J. Esteve, E. Figueras, F. Campabadal, L. Montelius, N. Barniol, Anja Boisen

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Abstract

Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip. (c) 2005 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	87
Issue number	4
Pages (from-to)	043507
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.1999838
Publication status	Published - 2005

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Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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Forsén, E. S., Abadal, G., Ghatnekar-Nilsson, S., Teva, J., Verd, J., Sandberg, R. K., Svendsen, W. E., Perez-Murano, F., Esteve, J., Figueras, E., Campabadal, F., Montelius, L., Barniol, N., & Boisen, A. (2005). Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry. Applied Physics Letters, 87(4), 043507. https://doi.org/10.1063/1.1999838

@article{2086e8bbde754258b159c4a14b14ec29,

title = "Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry",

abstract = "Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip. (c) 2005 American Institute of Physics.",

author = "Fors{\'e}n, {Esko Sebastian} and G. Abadal and S. Ghatnekar-Nilsson and J. Teva and J. Verd and Sandberg, {Rasmus Kousholt} and Svendsen, {Winnie Edith} and F. Perez-Murano and J. Esteve and E. Figueras and F. Campabadal and L. Montelius and N. Barniol and Anja Boisen",

note = "Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "2005",

doi = "10.1063/1.1999838",

language = "English",

volume = "87",

pages = "043507",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

Forsén, ES, Abadal, G, Ghatnekar-Nilsson, S, Teva, J, Verd, J, Sandberg, RK, Svendsen, WE, Perez-Murano, F, Esteve, J, Figueras, E, Campabadal, F, Montelius, L, Barniol, N & Boisen, A 2005, 'Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry', Applied Physics Letters, vol. 87, no. 4, pp. 043507. https://doi.org/10.1063/1.1999838

TY - JOUR

T1 - Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

AU - Forsén, Esko Sebastian

AU - Abadal, G.

AU - Ghatnekar-Nilsson, S.

AU - Teva, J.

AU - Verd, J.

AU - Sandberg, Rasmus Kousholt

AU - Svendsen, Winnie Edith

AU - Perez-Murano, F.

AU - Esteve, J.

AU - Figueras, E.

AU - Campabadal, F.

AU - Montelius, L.

AU - Barniol, N.

AU - Boisen, Anja

N1 - Copyright (2005) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 2005

Y1 - 2005

N2 - Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip. (c) 2005 American Institute of Physics.

AB - Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor (CMOS) chips. Fabricated resonator systems have been designed to have resonance frequencies up to 1.5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4 ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14.8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip. (c) 2005 American Institute of Physics.

U2 - 10.1063/1.1999838

DO - 10.1063/1.1999838

M3 - Journal article

SN - 0003-6951

VL - 87

SP - 043507

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

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