Ultranarrow polaritons in a semiconductor microcavity

Jacob Riis Jensen, Paola Borri, Wolfgang Langbein, Jørn Märcher Hvam

    Research output: Contribution to journalJournal articleResearchpeer-review

    408 Downloads (Pure)


    We have achieved a record high ratio (19) of the Rabi splitting (3.6 meV) to the polariton linewidth (190 mu eV), in a semiconductor lambda microcavity with a single 25 nm GaAs quantum well at the antinode. The narrow polariton lines are obtained with a special cavity design which reduces the exciton broadening due to scattering with free charges and has a very low spatial gradient of the cavity resonance energy. Since the static quantum-well disorder is very small, the polariton broadening is dominantly homogeneous. Still, the measured linewidths close to zero detuning cannot be correctly predicted using the linewidth averaging model. (C) 2000 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Issue number22
    Pages (from-to)3262-3264
    Publication statusPublished - 2000

    Bibliographical note

    Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.




    Dive into the research topics of 'Ultranarrow polaritons in a semiconductor microcavity'. Together they form a unique fingerprint.

    Cite this