Ultranarrow polaritons  in a semiconductor microcavity

Jacob Riis Jensen; Paola Borri; Wolfgang Langbein; Jørn Märcher Hvam

doi:10.1063/1.126601

Ultranarrow polaritons in a semiconductor microcavity

Jacob Riis Jensen, Paola Borri, Wolfgang Langbein, Jørn Märcher Hvam

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Abstract

We have achieved a record high ratio (19) of the Rabi splitting (3.6 meV) to the polariton linewidth (190 mu eV), in a semiconductor lambda microcavity with a single 25 nm GaAs quantum well at the antinode. The narrow polariton lines are obtained with a special cavity design which reduces the exciton broadening due to scattering with free charges and has a very low spatial gradient of the cavity resonance energy. Since the static quantum-well disorder is very small, the polariton broadening is dominantly homogeneous. Still, the measured linewidths close to zero detuning cannot be correctly predicted using the linewidth averaging model. (C) 2000 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	76
Issue number	22
Pages (from-to)	3262-3264
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.126601
Publication status	Published - 2000

Bibliographical note

Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

QUANTUM-WELL EXCITONS

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Cite this

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