Ultralow-power GaAs MESFET MSI circuits using two-phase dynamic FET logic

Peter Stuhr Lassen; S. I. Long; K. R. Nary

doi:10.1109/4.237519

Ultralow-power GaAs MESFET MSI circuits using two-phase dynamic FET logic

Peter Stuhr Lassen
, S. I. Long
, K. R. Nary

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

Two-phase dynamic FET logic (TDFL) gates are used in GaAs MESFET MSI circuits to implement very low power 4-b ripple carry adders and a variable modulus (2 to 31) prescaler. Operation of the adders is demonstrated at 500 MHz with an associated power dissipation of less than 1.0 mW and at 750 MHz with Pd=1.7 mW. The prescaler, which contains 166 TDFL gates and 79 static gates, is shown to operate up to 850 MHz with an associated power dissipation of 9.2 mW from its 1.0-V supply. The operation of the adders and prescalers demonstrates the use of three- and four-input TDFL gates and a completely dynamic TDFL XNOR gate. The TDFL gates in these circuits dissipate only from 14 to 20 nW/MHz

Original language	English
Journal	I E E E Journal of Solid State Circuits
Volume	28
Issue number	10
Pages (from-to)	1038-1045
ISSN	0018-9200
DOIs	https://doi.org/10.1109/4.237519
Publication status	Published - 1993

Bibliographical note

Copyright: 1993 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Ultralow-power GaAs MESFET MSI circuits using two-phase dynamic FET logic",

abstract = "Two-phase dynamic FET logic (TDFL) gates are used in GaAs MESFET MSI circuits to implement very low power 4-b ripple carry adders and a variable modulus (2 to 31) prescaler. Operation of the adders is demonstrated at 500 MHz with an associated power dissipation of less than 1.0 mW and at 750 MHz with Pd=1.7 mW. The prescaler, which contains 166 TDFL gates and 79 static gates, is shown to operate up to 850 MHz with an associated power dissipation of 9.2 mW from its 1.0-V supply. The operation of the adders and prescalers demonstrates the use of three- and four-input TDFL gates and a completely dynamic TDFL XNOR gate. The TDFL gates in these circuits dissipate only from 14 to 20 nW/MHz",

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AU - Lassen, Peter Stuhr

AU - Long, S. I.

AU - Nary, K. R.

N1 - Copyright: 1993 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

PY - 1993

Y1 - 1993

N2 - Two-phase dynamic FET logic (TDFL) gates are used in GaAs MESFET MSI circuits to implement very low power 4-b ripple carry adders and a variable modulus (2 to 31) prescaler. Operation of the adders is demonstrated at 500 MHz with an associated power dissipation of less than 1.0 mW and at 750 MHz with Pd=1.7 mW. The prescaler, which contains 166 TDFL gates and 79 static gates, is shown to operate up to 850 MHz with an associated power dissipation of 9.2 mW from its 1.0-V supply. The operation of the adders and prescalers demonstrates the use of three- and four-input TDFL gates and a completely dynamic TDFL XNOR gate. The TDFL gates in these circuits dissipate only from 14 to 20 nW/MHz

AB - Two-phase dynamic FET logic (TDFL) gates are used in GaAs MESFET MSI circuits to implement very low power 4-b ripple carry adders and a variable modulus (2 to 31) prescaler. Operation of the adders is demonstrated at 500 MHz with an associated power dissipation of less than 1.0 mW and at 750 MHz with Pd=1.7 mW. The prescaler, which contains 166 TDFL gates and 79 static gates, is shown to operate up to 850 MHz with an associated power dissipation of 9.2 mW from its 1.0-V supply. The operation of the adders and prescalers demonstrates the use of three- and four-input TDFL gates and a completely dynamic TDFL XNOR gate. The TDFL gates in these circuits dissipate only from 14 to 20 nW/MHz

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DO - 10.1109/4.237519

M3 - Journal article

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JF - I E E E Journal of Solid State Circuits

IS - 10

ER -

Ultralow-power GaAs MESFET MSI circuits using two-phase dynamic FET logic

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