Ultrahigh-speed hybrid laser for silicon photonic integrated chips

Il-Sug Chung (Invited author), Gyeong Cheol Park (Invited author), Qijiang Ran (Invited author), Elizaveta Semenova (Invited author), Kresten Yvind (Invited author), Jesper Mørk (Invited author)

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Abstract

Increasing power consumption for electrical interconnects between and inside chips is posing a real challenge to continue the performance scaling of processors/computers as predicted by D. Moore. In recent processors, energy consumption for electrical interconnects is half of power supplied and will be 80% in near future. This challenge strongly has motivated replacing electrical interconnects with optical ones even in chip level communications [1]. This chip-level optical interconnects need quite different performance of optoelectronic devices than required for conventional optical communications. For a light source, the energy consumption per sending a bit is required to be <10 fJ/bit for on-chip interconnects and <100 fJ/bit for off-chip interconnects; this is two or three orders of magnitude smaller than the conventional devices. To meet the energy/bit requirement, many innovative laser diode and light-emitting diode (LED) structures have been proposed so far. Our hybrid laser is one of
these efforts [2].

The hybrid laser consists of a dielectric reflector, a III-V semiconductor active material, and a high-index-contrast grating (HCG) reflector formed in the silicon layer of a silicon-oninsulator (SOI) wafer. ‘Hybrid’ indicates that a III-V active material is wafer-bonded to a silicon SOI wafer. In the hybrid laser, light is vertically amplified between the dielectric and the HCG reflectors, while the light output is laterally emitted to a normal Si ridge waveguide that is connected to the HCG reflector. The HCG works as a vertical mirror as well as a vertical-to-lateral coupler. Very small field penetration into the HCG allows for 3-4 times smaller modal volume than typical vertical-cavity surface-emitting lasers (VCSELs). This leads to high direct modulation speed. Details on device operating mechanism will be
explained in the lecture.

Recently, a nano light-emitting diode (LED) with energy/bit < 1fJ/bit [3] and a nano laser diode with a buried heterostructure (BH) active material [4] have been recently reported in the literature. Additionally, device physics, engineering issue, and error-free light detection issue in quantum limit will be discussed in relation to these two structures.
Original languageEnglish
Title of host publicationNANO KOREA 2013
Number of pages1
Publication date2013
Publication statusPublished - 2013
Event11th International Nanotech Symposium & Nano-Convergence Expo (NANO KOREA 2013) - Seoul, Korea, Democratic People's Republic of
Duration: 10 Jul 201312 Jul 2013
http://symposium.nanokorea.or.kr/2013/

Conference

Conference11th International Nanotech Symposium & Nano-Convergence Expo (NANO KOREA 2013)
Country/TerritoryKorea, Democratic People's Republic of
CitySeoul
Period10/07/201312/07/2013
Internet address

Bibliographical note

Invited paper.

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