Ultrafast THz Saturable Absorption in Semiconductors

Dmitry Turchinovich, Matthias C. Hoffmann

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

We demonstrate THz saturable absorption in n-doped semiconductors GaAs, GaP, and Ge in a nonlinear THz time-domain spectroscopy experiment. Saturable absorption is caused by sample conductivity modulation due to electron heating and satellite valley scattering in the field of a strong THz pulse.
Original languageEnglish
Title of host publicationProceedings of international Workshop on Optical Terahertz Science and Technology
Publication date2011
Publication statusPublished - 2011
EventInternational Workshop on Optical Terahertz Science and Technology - Santa Barbara, CA, United States
Duration: 13 Mar 201117 Mar 2011

Workshop

WorkshopInternational Workshop on Optical Terahertz Science and Technology
CountryUnited States
CitySanta Barbara, CA
Period13/03/201117/03/2011

Cite this

Turchinovich, D., & Hoffmann, M. C. (2011). Ultrafast THz Saturable Absorption in Semiconductors. In Proceedings of international Workshop on Optical Terahertz Science and Technology http://otst2011.itst.ucsb.edu/home.html