Ultrafast THz Saturable Absorption in Semiconductors

Dmitry Turchinovich; Matthias C. Hoffmann

Ultrafast THz Saturable Absorption in Semiconductors

Dmitry Turchinovich, Matthias C. Hoffmann

University of Hamburg

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We demonstrate THz saturable absorption in n-doped semiconductors GaAs, GaP, and Ge in a nonlinear THz time-domain spectroscopy experiment. Saturable absorption is caused by sample conductivity modulation due to electron heating and satellite valley scattering in the field of a strong THz pulse.

Original language	English
Title of host publication	Proceedings of international Workshop on Optical Terahertz Science and Technology
Publication date	2011
Publication status	Published - 2011
Event	International Workshop on Optical Terahertz Science and Technology - Santa Barbara, CA, United States Duration: 13 Mar 2011 → 17 Mar 2011

Workshop

Workshop	International Workshop on Optical Terahertz Science and Technology
Country/Territory	United States
City	Santa Barbara, CA
Period	13/03/2011 → 17/03/2011

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@inproceedings{c53a375531b849e7b53326b5e7d91419,

title = "Ultrafast THz Saturable Absorption in Semiconductors",

abstract = "We demonstrate THz saturable absorption in n-doped semiconductors GaAs, GaP, and Ge in a nonlinear THz time-domain spectroscopy experiment. Saturable absorption is caused by sample conductivity modulation due to electron heating and satellite valley scattering in the field of a strong THz pulse.",

author = "Dmitry Turchinovich and Hoffmann, {Matthias C.}",

year = "2011",

language = "English",

booktitle = "Proceedings of international Workshop on Optical Terahertz Science and Technology",

note = "International Workshop on Optical Terahertz Science and Technology, OTST 2011 ; Conference date: 13-03-2011 Through 17-03-2011",

}

TY - GEN

T1 - Ultrafast THz Saturable Absorption in Semiconductors

AU - Turchinovich, Dmitry

AU - Hoffmann, Matthias C.

PY - 2011

Y1 - 2011

N2 - We demonstrate THz saturable absorption in n-doped semiconductors GaAs, GaP, and Ge in a nonlinear THz time-domain spectroscopy experiment. Saturable absorption is caused by sample conductivity modulation due to electron heating and satellite valley scattering in the field of a strong THz pulse.

AB - We demonstrate THz saturable absorption in n-doped semiconductors GaAs, GaP, and Ge in a nonlinear THz time-domain spectroscopy experiment. Saturable absorption is caused by sample conductivity modulation due to electron heating and satellite valley scattering in the field of a strong THz pulse.

M3 - Article in proceedings

BT - Proceedings of international Workshop on Optical Terahertz Science and Technology

T2 - International Workshop on Optical Terahertz Science and Technology

Y2 - 13 March 2011 through 17 March 2011

ER -

Ultrafast THz Saturable Absorption in Semiconductors

Abstract

Workshop

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