Ultrafast THz Saturable Absorption in Doped Semiconductors

Dmitry Turchinovich; Matthias C. Hoffmann

Ultrafast THz Saturable Absorption in Doped Semiconductors

Dmitry Turchinovich
, Matthias C. Hoffmann

University of Hamburg

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.

Original language	English
Title of host publication	Proceedings of CLEO:2011
Publisher	Optical Society of America
Publication date	2011
Pages	JThB39
Publication status	Published - 2011
Event	Conference on Lasers and Electrooptics : CLEO:QELS – Fundamental Science - Baltimore, Maryland, USA Duration: 1 Jan 2011 → …

Conference

Conference	Conference on Lasers and Electrooptics : CLEO:QELS – Fundamental Science
City	Baltimore, Maryland, USA
Period	01/01/2011 → …

Keywords

Pulse compression
Terahertz spectroscopy
Ultrafast nonlinear optics
Ultrafast spectroscopy

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@inproceedings{d5aa3423d991443bb173b0b8d56fcb82,

title = "Ultrafast THz Saturable Absorption in Doped Semiconductors",

abstract = "We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.",

keywords = "Pulse compression, Terahertz spectroscopy, Ultrafast nonlinear optics, Ultrafast spectroscopy",

author = "Dmitry Turchinovich and Hoffmann, \{Matthias C.\}",

year = "2011",

language = "English",

pages = "JThB39",

booktitle = "Proceedings of CLEO:2011",

publisher = "Optical Society of America",

note = "Conference on Lasers and Electrooptics : CLEO:QELS – Fundamental Science ; Conference date: 01-01-2011",

}

TY - GEN

T1 - Ultrafast THz Saturable Absorption in Doped Semiconductors

AU - Turchinovich, Dmitry

AU - Hoffmann, Matthias C.

PY - 2011

Y1 - 2011

N2 - We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.

AB - We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.

KW - Pulse compression

KW - Terahertz spectroscopy

KW - Ultrafast nonlinear optics

KW - Ultrafast spectroscopy

M3 - Article in proceedings

SP - JThB39

BT - Proceedings of CLEO:2011

PB - Optical Society of America

T2 - Conference on Lasers and Electrooptics : CLEO:QELS – Fundamental Science

Y2 - 1 January 2011

ER -

Ultrafast THz Saturable Absorption in Doped Semiconductors

Abstract

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Keywords

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