Ultrafast THz Saturable Absorption in Doped Semiconductors

Dmitry Turchinovich, Matthias C. Hoffmann

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

    Abstract

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.
    Original languageEnglish
    Title of host publicationProceedings of CLEO:2011
    PublisherOptical Society of America
    Publication date2011
    PagesJThB39
    Publication statusPublished - 2011
    EventConference on Lasers and Electrooptics : CLEO:QELS – Fundamental Science - Baltimore, Maryland, USA
    Duration: 1 Jan 2011 → …

    Conference

    ConferenceConference on Lasers and Electrooptics : CLEO:QELS – Fundamental Science
    CityBaltimore, Maryland, USA
    Period01/01/2011 → …

    Keywords

    • Pulse compression
    • Terahertz spectroscopy
    • Ultrafast nonlinear optics
    • Ultrafast spectroscopy

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