Ultrafast THz Saturable Absorption in Doped Semiconductors

Dmitry Turchinovich, Matthias C. Hoffmann

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.
Original languageEnglish
Title of host publicationProceedings of CLEO:2011
PublisherOptical Society of America
Publication date2011
PagesJThB39
Publication statusPublished - 2011
EventConference on Lasers and Electrooptics : CLEO:QELS – Fundamental Science - Baltimore, Maryland, USA
Duration: 1 Jan 2011 → …

Conference

ConferenceConference on Lasers and Electrooptics : CLEO:QELS – Fundamental Science
CityBaltimore, Maryland, USA
Period01/01/2011 → …

Keywords

  • Pulse compression
  • Terahertz spectroscopy
  • Ultrafast nonlinear optics
  • Ultrafast spectroscopy

Cite this

Turchinovich, D., & Hoffmann, M. C. (2011). Ultrafast THz Saturable Absorption in Doped Semiconductors. In Proceedings of CLEO:2011 (pp. JThB39). Optical Society of America. http://www.cleoconference.org/