Ultrafast Switching Superjunction MOSFETs for Single Phase PFC Applications

Juan Carlos Hernandez Botella, Lars Press Petersen, Michael A. E. Andersen, Niels H. Petersen

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    Abstract

    This paper presents a guide on characterizing state-of-the-art silicon superjunction (SJ) devices in the 600V range for single phase power factor correction (PFC) applications. The characterization procedure is based on a minimally inductive double pulse tester (DPT) with a very low intrusive current measurement method, which enables reaching the switching speed limits of these devices. Due to the intrinsic low and non-linear capacitances in vertical SJ MOSFETs, special attention needs to be paid to the gate drive design to minimize oscillations and limit the maximum at turn off. This paper investigates the latest SJ devices in order to set a reference for future research on improvement over silicon (Si) attained with the introduction of wide bandgap devices in single phase PFC applications. The obtained results show that the latest generation of SJ devices set a new benchmark for its wide bandgap competitors.
    Original languageEnglish
    Title of host publicationProceedings of Twenty-Ninth Annual IEEE Applied Power Electronics Conference and Exposition
    PublisherIEEE
    Publication date2014
    Pages143-149
    ISBN (Print)978-1-4799-2325-0
    DOIs
    Publication statusPublished - 2014
    Event2014 IEEE Applied Power Electronics Conference and Exposition - Fort Worth Convention Center , Fort Worth, United States
    Duration: 16 Mar 201420 Mar 2014
    Conference number: 29
    https://apec-conf.org/uploads/documents/APEC2014pocketv1feb15.pdf

    Conference

    Conference2014 IEEE Applied Power Electronics Conference and Exposition
    Number29
    LocationFort Worth Convention Center
    Country/TerritoryUnited States
    CityFort Worth
    Period16/03/201420/03/2014
    Internet address

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