Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy

Henrik Porte, Peter Uhd Jepsen, N. Daghestani, E.U. Rafailov, Dmitry Turchinovich

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Abstract

We observe ultrafast release and capture of charge carriers in InGaAs/GaAs quantum dots in a room-temperature optical pump-terahertz probe experiment sensitive to the population dynamics of conducting states. In case of resonant excitation of the quantum dot ground state, the maximum conductivity is achieved at approximately 35 ps after photoexcitation, which is assigned to release of carriers from the quantum dots. When exciting carriers into the conduction band of the barriers, depletion of the conductivity via carrier capture into the quantum dots with a few picosecond pump fluence-dependent time constant was observed.
Original languageEnglish
JournalApplied Physics Letters
Volume94
Issue number26
Pages (from-to)262104
ISSN0003-6951
DOIs
Publication statusPublished - 2009

Bibliographical note

Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

  • III-V semiconductors
  • electrical conductivity
  • ground states
  • conduction bands
  • gallium arsenide
  • submillimetre wave spectra
  • hole traps
  • semiconductor quantum dots
  • indium compounds
  • high-speed optical techniques
  • electron traps
  • time resolved spectra

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