Ultrafast nonlinear response of silicon carbide to intense THz fields

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We demonstrate ultrafast nonlinear absorption induced by strong, single-cycle THz fields in bulk, lightly doped 4H silicon carbide. A combination of Zener tunneling and intraband transitions makes the effect as at least as fast as the excitation pulse. The sub-picosecond recovery time makes the observed response the fastest nonlinear modulation scheme for THz signals
reported so far.
Original languageEnglish
Title of host publicationNonlinear Optics 2017
Number of pages2
PublisherOptical Society of America (OSA)
Publication date2017
Article numberNW3A.3
ISBN (Print)978-0-9600380-6-0
Publication statusPublished - 2017
EventNonlinear Optics 2017 - Waikoloa, United States
Duration: 17 Jul 201721 Jul 2017


ConferenceNonlinear Optics 2017
CountryUnited States
CitationsWeb of Science® Times Cited: No match on DOI

ID: 140459651