Ultrafast nonlinear response of silicon carbide to intense THz fields

Abebe Tilahun Tarekegne; Krzysztof Iwaszczuk; Korbinian J. Kaltenecker; Binbin Zhou; Weifang Lu; Haiyan Ou; Peter Uhd Jepsen

doi:10.1364/NLO.2017.NW3A.3

Ultrafast nonlinear response of silicon carbide to intense THz fields

Abebe Tilahun Tarekegne, Krzysztof Iwaszczuk, Korbinian J. Kaltenecker, Binbin Zhou, Weifang Lu, Haiyan Ou, Peter Uhd Jepsen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We demonstrate ultrafast nonlinear absorption induced by strong, single-cycle THz fields in bulk, lightly doped 4H silicon carbide. A combination of Zener tunneling and intraband transitions makes the effect as at least as fast as the excitation pulse. The sub-picosecond recovery time makes the observed response the fastest nonlinear modulation scheme for THz signals
reported so far.

Original language	English
Title of host publication	Nonlinear Optics 2017
Number of pages	2
Publisher	Optical Society of America (OSA)
Publication date	2017
Article number	NW3A.3
ISBN (Print)	978-0-9600380-6-0
DOIs	https://doi.org/10.1364/NLO.2017.NW3A.3
Publication status	Published - 2017
Event	Nonlinear Optics 2017 - Waikoloa, United States Duration: 17 Jul 2017 → 21 Jul 2017

Conference

Conference	Nonlinear Optics 2017
Country/Territory	United States
City	Waikoloa
Period	17/07/2017 → 21/07/2017

Access to Document

10.1364/NLO.2017.NW3A.3

OpenUrl availability

Full text

Cite this

@inproceedings{f2dd2468ebe34ad0bc846f49c0f9ef7f,

title = "Ultrafast nonlinear response of silicon carbide to intense THz fields",

abstract = "We demonstrate ultrafast nonlinear absorption induced by strong, single-cycle THz fields in bulk, lightly doped 4H silicon carbide. A combination of Zener tunneling and intraband transitions makes the effect as at least as fast as the excitation pulse. The sub-picosecond recovery time makes the observed response the fastest nonlinear modulation scheme for THz signalsreported so far. ",

author = "Tarekegne, {Abebe Tilahun} and Krzysztof Iwaszczuk and Kaltenecker, {Korbinian J.} and Binbin Zhou and Weifang Lu and Haiyan Ou and Jepsen, {Peter Uhd}",

year = "2017",

doi = "10.1364/NLO.2017.NW3A.3",

language = "English",

isbn = "978-0-9600380-6-0",

booktitle = "Nonlinear Optics 2017",

publisher = "Optical Society of America (OSA)",

note = "Nonlinear Optics 2017 ; Conference date: 17-07-2017 Through 21-07-2017",

}

TY - GEN

T1 - Ultrafast nonlinear response of silicon carbide to intense THz fields

AU - Tarekegne, Abebe Tilahun

AU - Iwaszczuk, Krzysztof

AU - Kaltenecker, Korbinian J.

AU - Zhou, Binbin

AU - Lu, Weifang

AU - Ou, Haiyan

AU - Jepsen, Peter Uhd

PY - 2017

Y1 - 2017

N2 - We demonstrate ultrafast nonlinear absorption induced by strong, single-cycle THz fields in bulk, lightly doped 4H silicon carbide. A combination of Zener tunneling and intraband transitions makes the effect as at least as fast as the excitation pulse. The sub-picosecond recovery time makes the observed response the fastest nonlinear modulation scheme for THz signalsreported so far.

AB - We demonstrate ultrafast nonlinear absorption induced by strong, single-cycle THz fields in bulk, lightly doped 4H silicon carbide. A combination of Zener tunneling and intraband transitions makes the effect as at least as fast as the excitation pulse. The sub-picosecond recovery time makes the observed response the fastest nonlinear modulation scheme for THz signalsreported so far.

U2 - 10.1364/NLO.2017.NW3A.3

DO - 10.1364/NLO.2017.NW3A.3

M3 - Article in proceedings

SN - 978-0-9600380-6-0

BT - Nonlinear Optics 2017

PB - Optical Society of America (OSA)

T2 - Nonlinear Optics 2017

Y2 - 17 July 2017 through 21 July 2017

ER -

Ultrafast nonlinear response of silicon carbide to intense THz fields

Abstract

Conference

Access to Document

OpenUrl availability

Fingerprint

Cite this