Ultrafast nonlinear response of silicon carbide to intense THz fields

Abebe Tilahun Tarekegne, Krzysztof Iwaszczuk, Korbinian J. Kaltenecker, Binbin Zhou, Weifang Lu, Haiyan Ou, Peter Uhd Jepsen

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

We demonstrate ultrafast nonlinear absorption induced by strong, single-cycle THz fields in bulk, lightly doped 4H silicon carbide. A combination of Zener tunneling and intraband transitions makes the effect as at least as fast as the excitation pulse. The sub-picosecond recovery time makes the observed response the fastest nonlinear modulation scheme for THz signals
reported so far.
Original languageEnglish
Title of host publicationNonlinear Optics 2017
Number of pages2
PublisherOptical Society of America (OSA)
Publication date2017
Article numberNW3A.3
ISBN (Print)978-0-9600380-6-0
DOIs
Publication statusPublished - 2017
EventNonlinear Optics 2017 - Waikoloa, United States
Duration: 17 Jul 201721 Jul 2017

Conference

ConferenceNonlinear Optics 2017
CountryUnited States
CityWaikoloa
Period17/07/201721/07/2017

Cite this

Tarekegne, A. T., Iwaszczuk, K., Kaltenecker, K. J., Zhou, B., Lu, W., Ou, H., & Jepsen, P. U. (2017). Ultrafast nonlinear response of silicon carbide to intense THz fields. In Nonlinear Optics 2017 [NW3A.3] Optical Society of America (OSA). https://doi.org/10.1364/NLO.2017.NW3A.3