Ultrafast nonlinear response of silicon carbide to intense THz fields

Abebe Tilahun Tarekegne, Krzysztof Iwaszczuk, Korbinian J. Kaltenecker, Binbin Zhou, Weifang Lu, Haiyan Ou, Peter Uhd Jepsen

    Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review


    We demonstrate ultrafast nonlinear absorption induced by strong, single-cycle THz fields in bulk, lightly doped 4H silicon carbide. A combination of Zener tunneling and intraband transitions makes the effect as at least as fast as the excitation pulse. The sub-picosecond recovery time makes the observed response the fastest nonlinear modulation scheme for THz signals
    reported so far.
    Original languageEnglish
    Title of host publicationNonlinear Optics 2017
    Number of pages2
    PublisherOptical Society of America (OSA)
    Publication date2017
    Article numberNW3A.3
    ISBN (Print)978-0-9600380-6-0
    Publication statusPublished - 2017
    EventNonlinear Optics 2017 - Waikoloa, United States
    Duration: 17 Jul 201721 Jul 2017


    ConferenceNonlinear Optics 2017
    Country/TerritoryUnited States


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