Ultrafast nonlinear carrier dynamics in doped semiconductors in high THz fields

Matthias C. Hoffmann, Dmitry Turchinovich

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    Abstract

    THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses.
    Original languageEnglish
    Title of host publicationProceedings of EDISON 17
    Publication date2011
    Publication statusPublished - 2011
    Event17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures - Santa Barbara, CA, United States
    Duration: 8 Aug 201112 Aug 2011
    Conference number: 17
    http://www.asu.edu/aine/EDISON17/

    Conference

    Conference17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
    Number17
    Country/TerritoryUnited States
    CitySanta Barbara, CA
    Period08/08/201112/08/2011
    Internet address

    Bibliographical note

    Oral presentation.

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