Ultrafast nonlinear carrier dynamics in doped semiconductors in high THz fields

Matthias C. Hoffmann, Dmitry Turchinovich

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Abstract

THz frequency saturable absorption and intervalley carrier scattering in n-type semiconductors were observed using intensity-dependent transmission experiments as well as THz-pump—THz probe spectroscopy with ultrabroadband probe pulses.
Original languageEnglish
Title of host publicationProceedings of EDISON 17
Publication date2011
Publication statusPublished - 2011
Event17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures - Santa Barbara, CA, United States
Duration: 8 Aug 201112 Aug 2011
Conference number: 17
http://www.asu.edu/aine/EDISON17/

Conference

Conference17th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures
Number17
CountryUnited States
CitySanta Barbara, CA
Period08/08/201112/08/2011
Internet address

Bibliographical note

Oral presentation.

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