Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Tommy Winther Berg, Svend Bischoff, Ingibjörg Magnúsdóttir, Jesper Mørk

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    Abstract

    Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The on excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a on amplifier is found to be limited by the wetting-layer dynamics.
    Original languageEnglish
    JournalI E E E Photonics Technology Letters
    Volume13
    Issue number6
    Pages (from-to)541-543
    ISSN1041-1135
    DOIs
    Publication statusPublished - 2001

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