Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Tommy Winther Berg; Svend Bischoff; Ingibjörg Magnúsdóttir; Jesper Mørk

doi:10.1109/68.924013

Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Tommy Winther Berg, Svend Bischoff, Ingibjörg Magnúsdóttir, Jesper Mørk

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Abstract

Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The on excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a on amplifier is found to be limited by the wetting-layer dynamics.

Original language	English
Journal	I E E E Photonics Technology Letters
Volume	13
Issue number	6
Pages (from-to)	541-543
ISSN	1041-1135
DOIs	https://doi.org/10.1109/68.924013
Publication status	Published - 2001

Bibliographical note

Copyright: 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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title = "Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices",

abstract = "Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The on excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a on amplifier is found to be limited by the wetting-layer dynamics.",

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AU - Bischoff, Svend

AU - Magnúsdóttir, Ingibjörg

AU - Mørk, Jesper

N1 - Copyright: 2000 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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AB - Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The on excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a on amplifier is found to be limited by the wetting-layer dynamics.

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DO - 10.1109/68.924013

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