Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices

Tommy Winther Berg, Svend Bischoff, Ingibjörg Magnúsdóttir, Jesper Mørk

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Abstract

Measurements of ultrafast gain recovery in self-assembled InAs quantum-dot (QD) amplifiers are explained by a comprehensive numerical model. The on excited state carriers are found to act as a reservoir for the optically active ground state carriers resulting in an ultrafast gain recovery as long as the excited state is well populated. However, when pulses are injected into the device at high-repetition frequencies, the response of a on amplifier is found to be limited by the wetting-layer dynamics.
Original languageEnglish
JournalI E E E Photonics Technology Letters
Volume13
Issue number6
Pages (from-to)541-543
ISSN1041-1135
DOIs
Publication statusPublished - 2001

Bibliographical note

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