Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells, observed by transient THz spectroscopy

Dmitry Turchinovich; Henrik Porte; David Cooke; Peter Uhd Jepsen

doi:10.1117/12.839847

Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells, observed by transient THz spectroscopy

Dmitry Turchinovich, Henrik Porte, David Cooke, Peter Uhd Jepsen

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

We investigate ultrafast carrier dynamics in photoexcited InGaN/GaN multiple quantum wells by time-resolved terahertz spectroscopy. The initially very strong built-in piezoelectric field is screened upon photoexcitation by the polarized carriers, and is gradually restored as the carriers recombine. The conductivity related to the presence of photoexcited carriers, sensed by the THz probe pulses, shows a non-exponential, slowing-down decay with time, which is explained by the gradual restoration of the built-in field in the QWs and consequent quenching of recombination. Screening and restoration of the built-in field are confirmed by the photoluminescence measurements.

Original language	English
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7600
Pages (from-to)	76001W
ISSN	0277-786X
DOIs	https://doi.org/10.1117/12.839847
Publication status	Published - 2010
Event	Vertical-Cavity Surface-Emitting Lasers XIV: Photonics West: Integrated Optoelectronic Devices - San Francisco, United States Duration: 23 Jan 2010 → 28 Jan 2010

Conference

Conference	Vertical-Cavity Surface-Emitting Lasers XIV
Country/Territory	United States
City	San Francisco
Period	23/01/2010 → 28/01/2010

Keywords

polarization
carrier dynamics
conductivity dynamics
quantum well
Gallium nitride

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10.1117/12.839847

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title = "Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells, observed by transient THz spectroscopy",

abstract = "We investigate ultrafast carrier dynamics in photoexcited InGaN/GaN multiple quantum wells by time-resolved terahertz spectroscopy. The initially very strong built-in piezoelectric field is screened upon photoexcitation by the polarized carriers, and is gradually restored as the carriers recombine. The conductivity related to the presence of photoexcited carriers, sensed by the THz probe pulses, shows a non-exponential, slowing-down decay with time, which is explained by the gradual restoration of the built-in field in the QWs and consequent quenching of recombination. Screening and restoration of the built-in field are confirmed by the photoluminescence measurements.",

keywords = "polarization, carrier dynamics, conductivity dynamics, quantum well, Gallium nitride",

author = "Dmitry Turchinovich and Henrik Porte and David Cooke and Jepsen, {Peter Uhd}",

year = "2010",

doi = "10.1117/12.839847",

language = "English",

volume = "7600",

pages = "76001W",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "Society of Photo-Optical Instrumentation Engineers",

note = "Vertical-Cavity Surface-Emitting Lasers XIV : Photonics West: Integrated Optoelectronic Devices ; Conference date: 23-01-2010 Through 28-01-2010",

}

Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells, observed by transient THz spectroscopy. / Turchinovich, Dmitry; Porte, Henrik; Cooke, David et al.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7600, 2010, p. 76001W.

Research output: Contribution to journal › Conference article › Research › peer-review

TY - GEN

T1 - Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells, observed by transient THz spectroscopy

AU - Turchinovich, Dmitry

AU - Porte, Henrik

AU - Cooke, David

AU - Jepsen, Peter Uhd

PY - 2010

Y1 - 2010

N2 - We investigate ultrafast carrier dynamics in photoexcited InGaN/GaN multiple quantum wells by time-resolved terahertz spectroscopy. The initially very strong built-in piezoelectric field is screened upon photoexcitation by the polarized carriers, and is gradually restored as the carriers recombine. The conductivity related to the presence of photoexcited carriers, sensed by the THz probe pulses, shows a non-exponential, slowing-down decay with time, which is explained by the gradual restoration of the built-in field in the QWs and consequent quenching of recombination. Screening and restoration of the built-in field are confirmed by the photoluminescence measurements.

AB - We investigate ultrafast carrier dynamics in photoexcited InGaN/GaN multiple quantum wells by time-resolved terahertz spectroscopy. The initially very strong built-in piezoelectric field is screened upon photoexcitation by the polarized carriers, and is gradually restored as the carriers recombine. The conductivity related to the presence of photoexcited carriers, sensed by the THz probe pulses, shows a non-exponential, slowing-down decay with time, which is explained by the gradual restoration of the built-in field in the QWs and consequent quenching of recombination. Screening and restoration of the built-in field are confirmed by the photoluminescence measurements.

KW - polarization

KW - carrier dynamics

KW - conductivity dynamics

KW - quantum well

KW - Gallium nitride

U2 - 10.1117/12.839847

DO - 10.1117/12.839847

M3 - Conference article

SN - 0277-786X

VL - 7600

SP - 76001W

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Vertical-Cavity Surface-Emitting Lasers XIV

Y2 - 23 January 2010 through 28 January 2010

ER -

Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells, observed by transient THz spectroscopy

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Keywords

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