Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells, observed by transient THz spectroscopy

Dmitry Turchinovich, Henrik Porte, David Cooke, Peter Uhd Jepsen

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

We investigate ultrafast carrier dynamics in photoexcited InGaN/GaN multiple quantum wells by time-resolved terahertz spectroscopy. The initially very strong built-in piezoelectric field is screened upon photoexcitation by the polarized carriers, and is gradually restored as the carriers recombine. The conductivity related to the presence of photoexcited carriers, sensed by the THz probe pulses, shows a non-exponential, slowing-down decay with time, which is explained by the gradual restoration of the built-in field in the QWs and consequent quenching of recombination. Screening and restoration of the built-in field are confirmed by the photoluminescence measurements.
Original languageEnglish
JournalProceedings of SPIE, the International Society for Optical Engineering
Volume7600
Pages (from-to)76001W
ISSN0277-786X
DOIs
Publication statusPublished - 2010
EventPhotonics West : Integrated Optoelectronic Devices - San Francisco, CA, USA
Duration: 1 Jan 2010 → …

Conference

ConferencePhotonics West : Integrated Optoelectronic Devices
CitySan Francisco, CA, USA
Period01/01/2010 → …

Keywords

  • polarization
  • carrier dynamics
  • conductivity dynamics
  • quantum well
  • Gallium nitride

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