Ultrafast conductivity dynamics in optically excited InGaN/GaN multiple quantum wells, observed by transient THz spectroscopy

Dmitry Turchinovich, Henrik Porte, David Cooke, Peter Uhd Jepsen

    Research output: Contribution to journalConference articleResearchpeer-review

    Abstract

    We investigate ultrafast carrier dynamics in photoexcited InGaN/GaN multiple quantum wells by time-resolved terahertz spectroscopy. The initially very strong built-in piezoelectric field is screened upon photoexcitation by the polarized carriers, and is gradually restored as the carriers recombine. The conductivity related to the presence of photoexcited carriers, sensed by the THz probe pulses, shows a non-exponential, slowing-down decay with time, which is explained by the gradual restoration of the built-in field in the QWs and consequent quenching of recombination. Screening and restoration of the built-in field are confirmed by the photoluminescence measurements.
    Original languageEnglish
    JournalProceedings of SPIE, the International Society for Optical Engineering
    Volume7600
    Pages (from-to)76001W
    ISSN0277-786X
    DOIs
    Publication statusPublished - 2010
    EventPhotonics West : Integrated Optoelectronic Devices - San Francisco, CA, USA
    Duration: 1 Jan 2010 → …

    Conference

    ConferencePhotonics West : Integrated Optoelectronic Devices
    CitySan Francisco, CA, USA
    Period01/01/2010 → …

    Keywords

    • polarization
    • carrier dynamics
    • conductivity dynamics
    • quantum well
    • Gallium nitride

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