Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

Henrik Porte; Dmitry Turchinovich; David Cooke; Peter Uhd Jepsen

Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

Henrik Porte, Dmitry Turchinovich, David Cooke, Peter Uhd Jepsen

Department of Photonics Engineering

Research output: Contribution to conference › Conference abstract for conference › Research › peer-review

Abstract

We studied the THz conductivity of InGaN/GaN multiple quantum wells (MQWs)by time-resolved terahertz spectroscopy. A nonexponential carrier density decay is observed due to the restoration of a built-in piezoelectric field. Terahertz conductivity spectra show a nonmetallic behavior of the carriers.

Original language	English
Publication date	2009
Publication status	Published - 2009
Event	1st Nordic Meeting in Physics - Kongens Lyngby, Denmark Duration: 16 Jun 2009 → 18 Jun 2009

Conference

Conference	1st Nordic Meeting in Physics
Country	Denmark
City	Kongens Lyngby
Period	16/06/2009 → 18/06/2009

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@conference{9006ac183e0848c08fb8063eb0949410,

title = "Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells",

abstract = "We studied the THz conductivity of InGaN/GaN multiple quantum wells (MQWs)by time-resolved terahertz spectroscopy. A nonexponential carrier density decay is observed due to the restoration of a built-in piezoelectric field. Terahertz conductivity spectra show a nonmetallic behavior of the carriers.",

author = "Henrik Porte and Dmitry Turchinovich and David Cooke and Jepsen, {Peter Uhd}",

year = "2009",

language = "English",

note = "1st Nordic Meeting in Physics ; Conference date: 16-06-2009 Through 18-06-2009",

}

TY - ABST

T1 - Ultrafast carrier dynamics in InGaN/GaN multiple quantum wells

AU - Porte, Henrik

AU - Turchinovich, Dmitry

AU - Cooke, David

AU - Jepsen, Peter Uhd

PY - 2009

Y1 - 2009

N2 - We studied the THz conductivity of InGaN/GaN multiple quantum wells (MQWs)by time-resolved terahertz spectroscopy. A nonexponential carrier density decay is observed due to the restoration of a built-in piezoelectric field. Terahertz conductivity spectra show a nonmetallic behavior of the carriers.

AB - We studied the THz conductivity of InGaN/GaN multiple quantum wells (MQWs)by time-resolved terahertz spectroscopy. A nonexponential carrier density decay is observed due to the restoration of a built-in piezoelectric field. Terahertz conductivity spectra show a nonmetallic behavior of the carriers.

M3 - Conference abstract for conference

T2 - 1st Nordic Meeting in Physics

Y2 - 16 June 2009 through 18 June 2009

ER -