Ultrafast carrier capture dynamics in InGaAs/GaAs quantum wires

David Cooke; F.A. Hegmann; Yu. I. Mazur; Zh. M. Wang; W. Black.; H. Wen; G.J. Salamo; T.D. Mishima; G.D. Lian; M.B. Johnson

doi:10.1063/1.2831024

Ultrafast carrier capture dynamics in InGaAs/GaAs quantum wires

David Cooke, F.A. Hegmann, Yu. I. Mazur, Zh. M. Wang, W. Black., H. Wen, G.J. Salamo, T.D. Mishima, G.D. Lian, M.B. Johnson

University of Alberta

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

We use time-resolved terahertz-pulse spectroscopy to study the ultrafast carrier dynamics in InGaAs/GaAs 311A quantum wires. Anisotropy in the photoconductive dynamics is observed when aligning the terahertz probe polarization parallel versus perpendicular to the wire direction. The origin of this anisotropy is the carrier capture into localized quantum-wire states from delocalized wetting layer or barrier regions over time scales from 6 to 30 ps. The capture efficiency is found to be strongly temperature dependent, with thermal emission dominating above 125 K, while state-filling effects within the wires influence the capture rate below 125 K. Transient spectroscopy reveals a Drude-like carrier conductivity.

Original language	English
Journal	Journal of Applied Physics
Volume	103
Issue number	2
ISSN	0021-8979
DOIs	https://doi.org/10.1063/1.2831024
Publication status	Published - 2008
Externally published	Yes

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title = "Ultrafast carrier capture dynamics in InGaAs/GaAs quantum wires",

abstract = "We use time-resolved terahertz-pulse spectroscopy to study the ultrafast carrier dynamics in InGaAs/GaAs 311A quantum wires. Anisotropy in the photoconductive dynamics is observed when aligning the terahertz probe polarization parallel versus perpendicular to the wire direction. The origin of this anisotropy is the carrier capture into localized quantum-wire states from delocalized wetting layer or barrier regions over time scales from 6 to 30 ps. The capture efficiency is found to be strongly temperature dependent, with thermal emission dominating above 125 K, while state-filling effects within the wires influence the capture rate below 125 K. Transient spectroscopy reveals a Drude-like carrier conductivity.",

author = "David Cooke and F.A. Hegmann and Mazur, {Yu. I.} and Wang, {Zh. M.} and W. Black. and H. Wen and G.J. Salamo and T.D. Mishima and G.D. Lian and M.B. Johnson",

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T1 - Ultrafast carrier capture dynamics in InGaAs/GaAs quantum wires

AU - Cooke, David

AU - Hegmann, F.A.

AU - Mazur, Yu. I.

AU - Wang, Zh. M.

AU - Black., W.

AU - Wen, H.

AU - Salamo, G.J.

AU - Mishima, T.D.

AU - Lian, G.D.

AU - Johnson, M.B.

PY - 2008

Y1 - 2008

N2 - We use time-resolved terahertz-pulse spectroscopy to study the ultrafast carrier dynamics in InGaAs/GaAs 311A quantum wires. Anisotropy in the photoconductive dynamics is observed when aligning the terahertz probe polarization parallel versus perpendicular to the wire direction. The origin of this anisotropy is the carrier capture into localized quantum-wire states from delocalized wetting layer or barrier regions over time scales from 6 to 30 ps. The capture efficiency is found to be strongly temperature dependent, with thermal emission dominating above 125 K, while state-filling effects within the wires influence the capture rate below 125 K. Transient spectroscopy reveals a Drude-like carrier conductivity.

AB - We use time-resolved terahertz-pulse spectroscopy to study the ultrafast carrier dynamics in InGaAs/GaAs 311A quantum wires. Anisotropy in the photoconductive dynamics is observed when aligning the terahertz probe polarization parallel versus perpendicular to the wire direction. The origin of this anisotropy is the carrier capture into localized quantum-wire states from delocalized wetting layer or barrier regions over time scales from 6 to 30 ps. The capture efficiency is found to be strongly temperature dependent, with thermal emission dominating above 125 K, while state-filling effects within the wires influence the capture rate below 125 K. Transient spectroscopy reveals a Drude-like carrier conductivity.

U2 - 10.1063/1.2831024

DO - 10.1063/1.2831024

M3 - Journal article

SN - 0021-8979

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Ultrafast carrier capture dynamics in InGaAs/GaAs quantum wires

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