Ultrafast carrier capture dynamics in InGaAs/GaAs quantum wires

David Cooke, F.A. Hegmann, Yu. I. Mazur, Zh. M. Wang, W. Black., H. Wen, G.J. Salamo, T.D. Mishima, G.D. Lian, M.B. Johnson

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

We use time-resolved terahertz-pulse spectroscopy to study the ultrafast carrier dynamics in InGaAs/GaAs 311A quantum wires. Anisotropy in the photoconductive dynamics is observed when aligning the terahertz probe polarization parallel versus perpendicular to the wire direction. The origin of this anisotropy is the carrier capture into localized quantum-wire states from delocalized wetting layer or barrier regions over time scales from 6 to 30 ps. The capture efficiency is found to be strongly temperature dependent, with thermal emission dominating above 125 K, while state-filling effects within the wires influence the capture rate below 125 K. Transient spectroscopy reveals a Drude-like carrier conductivity.
Original languageEnglish
JournalJournal of Applied Physics
Volume103
Issue number2
ISSN0021-8979
DOIs
Publication statusPublished - 2008
Externally publishedYes

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