Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

Karin Hermansson; Francois Grey; Stefan Bengtsson; Ulf Södervall

doi:10.1149/1.1838530

Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

Karin Hermansson
, Francois Grey
, Stefan Bengtsson
, Ulf Södervall

Chalmers University of Technology

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

Silicon surfaces have been cleaned and bonded in ultrahigh vacuum, at a pressure in the 10(-10) Torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface by spreading resistance and current vs. temperature measurements. This suggests that the barrier is caused by inevitable dislocation networks due to wafer misorientation, as well as residual oxygen at the interface.

Original language	English
Journal	Journal of The Electrochemical Society
Volume	145
Issue number	5
Pages (from-to)	1645-1649
ISSN	0013-4651
DOIs	https://doi.org/10.1149/1.1838530
Publication status	Published - 1998

Bibliographical note

Copyright The Electrochemical Society, Inc. [1998]. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS).

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title = "Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum",

abstract = "Silicon surfaces have been cleaned and bonded in ultrahigh vacuum, at a pressure in the 10(-10) Torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface by spreading resistance and current vs. temperature measurements. This suggests that the barrier is caused by inevitable dislocation networks due to wafer misorientation, as well as residual oxygen at the interface.",

author = "Karin Hermansson and Francois Grey and Stefan Bengtsson and Ulf S{\"o}dervall",

note = "Copyright The Electrochemical Society, Inc. [1998]. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS).",

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doi = "10.1149/1.1838530",

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AU - Hermansson, Karin

AU - Grey, Francois

AU - Bengtsson, Stefan

AU - Södervall, Ulf

N1 - Copyright The Electrochemical Society, Inc. [1998]. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS).

PY - 1998

Y1 - 1998

N2 - Silicon surfaces have been cleaned and bonded in ultrahigh vacuum, at a pressure in the 10(-10) Torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface by spreading resistance and current vs. temperature measurements. This suggests that the barrier is caused by inevitable dislocation networks due to wafer misorientation, as well as residual oxygen at the interface.

AB - Silicon surfaces have been cleaned and bonded in ultrahigh vacuum, at a pressure in the 10(-10) Torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface by spreading resistance and current vs. temperature measurements. This suggests that the barrier is caused by inevitable dislocation networks due to wafer misorientation, as well as residual oxygen at the interface.

U2 - 10.1149/1.1838530

DO - 10.1149/1.1838530

M3 - Journal article

SN - 0013-4651

VL - 145

SP - 1645

EP - 1649

JO - Journal of The Electrochemical Society

JF - Journal of The Electrochemical Society

IS - 5

ER -

Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

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