Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

Karin Hermansson, Francois Grey, Stefan Bengtsson, Ulf Södervall

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    Abstract

    Silicon surfaces have been cleaned and bonded in ultrahigh vacuum, at a pressure in the 10(-10) Torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface by spreading resistance and current vs. temperature measurements. This suggests that the barrier is caused by inevitable dislocation networks due to wafer misorientation, as well as residual oxygen at the interface.
    Original languageEnglish
    JournalJournal of The Electrochemical Society
    Volume145
    Issue number5
    Pages (from-to)1645-1649
    ISSN0013-4651
    DOIs
    Publication statusPublished - 1998

    Bibliographical note

    Copyright The Electrochemical Society, Inc. [1998]. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS).

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