Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

G. Hellings; E. Rosseel; E. Simoen; D. Radisic; Dirch Hjorth Petersen; Ole Hansen; P.F. Nielsen; G. Zschatzsch; A. Nazir; T. Clarysse; W. Vandervorst; T.Y. Hoffmann; K. De Meyer

doi:10.1149/1.3512990

Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

G. Hellings, E. Rosseel, E. Simoen, D. Radisic, Dirch Hjorth Petersen, Ole Hansen, P.F. Nielsen, G. Zschatzsch, A. Nazir, T. Clarysse, W. Vandervorst, T.Y. Hoffmann, K. De Meyer

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3) for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy and spectroscopic ellipsometry.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	1
Pages (from-to)	H39-H41
ISSN	1099-0062
DOIs	https://doi.org/10.1149/1.3512990
Publication status	Published - 2011

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Hellings, G. ; Rosseel, E. ; Simoen, E. ; Radisic, D. ; Petersen, Dirch Hjorth ; Hansen, Ole ; Nielsen, P.F. ; Zschatzsch, G. ; Nazir, A. ; Clarysse, T. ; Vandervorst, W. ; Hoffmann, T.Y. ; De Meyer, K. / Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing. In: Electrochemical and Solid-State Letters. 2011 ; Vol. 14, No. 1. pp. H39-H41.

@article{66c62c0ef9224852b1174493c18173dd,

title = "Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing",

abstract = "Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3) for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy and spectroscopic ellipsometry.",

author = "G. Hellings and E. Rosseel and E. Simoen and D. Radisic and Petersen, {Dirch Hjorth} and Ole Hansen and P.F. Nielsen and G. Zschatzsch and A. Nazir and T. Clarysse and W. Vandervorst and T.Y. Hoffmann and {De Meyer}, K.",

year = "2011",

doi = "10.1149/1.3512990",

language = "English",

volume = "14",

pages = "H39--H41",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "The Electrochemical Society",

number = "1",

}

Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing. / Hellings, G.; Rosseel, E.; Simoen, E.; Radisic, D.; Petersen, Dirch Hjorth ; Hansen, Ole; Nielsen, P.F.; Zschatzsch, G.; Nazir, A.; Clarysse, T.; Vandervorst, W.; Hoffmann, T.Y.; De Meyer, K.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 1, 2011, p. H39-H41.

Research output: Contribution to journal › Journal article › Research › peer-review

TY - JOUR

T1 - Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

AU - Hellings, G.

AU - Rosseel, E.

AU - Simoen, E.

AU - Radisic, D.

AU - Petersen, Dirch Hjorth

AU - Hansen, Ole

AU - Nielsen, P.F.

AU - Zschatzsch, G.

AU - Nazir, A.

AU - Clarysse, T.

AU - Vandervorst, W.

AU - Hoffmann, T.Y.

AU - De Meyer, K.

PY - 2011

Y1 - 2011

N2 - Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3) for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy and spectroscopic ellipsometry.

AB - Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3) for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy and spectroscopic ellipsometry.

U2 - 10.1149/1.3512990

DO - 10.1149/1.3512990

M3 - Journal article

VL - 14

SP - H39-H41

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 1

ER -