Ultra-Low Voltage Class AB Switched Current Memory Cell

Mucha Igor

Ultra-Low Voltage Class AB Switched Current Memory Cell

Mucha Igor

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power consumption, as well as good noise performance.

Original language	English
Title of host publication	Proc. International Conference on Communications, Signals and Systems, vol.2
Place of Publication	Brno
Publisher	Technical University of Brno
Publication date	1996
Pages	535-538
Publication status	Published - 1996
Event	International Conference on Communications, Signals and Systems - Brno, Czech Republic Duration: 10 Sept 1996 → 12 Sept 1996

Conference

Conference	International Conference on Communications, Signals and Systems
Country/Territory	Czech Republic
City	Brno
Period	10/09/1996 → 12/09/1996

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Cite this

@inproceedings{c537e78a30bd4ffabedf714476e39c8c,

title = "Ultra-Low Voltage Class AB Switched Current Memory Cell",

abstract = "This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power consumption, as well as good noise performance.",

author = "Mucha Igor",

year = "1996",

language = "English",

pages = "535--538",

booktitle = "Proc. International Conference on Communications, Signals and Systems, vol.2",

publisher = "Technical University of Brno",

note = "International Conference on Communications, Signals and Systems, CSS'96 ; Conference date: 10-09-1996 Through 12-09-1996",

}

TY - GEN

T1 - Ultra-Low Voltage Class AB Switched Current Memory Cell

AU - Igor, Mucha

PY - 1996

Y1 - 1996

N2 - This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power consumption, as well as good noise performance.

AB - This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power consumption, as well as good noise performance.

M3 - Article in proceedings

SP - 535

EP - 538

BT - Proc. International Conference on Communications, Signals and Systems, vol.2

PB - Technical University of Brno

CY - Brno

T2 - International Conference on Communications, Signals and Systems

Y2 - 10 September 1996 through 12 September 1996

ER -